2SK3435-Z NEC [NEC], 2SK3435-Z Datasheet - Page 2

• Manufacturer Part Number: 2SK3435-Z
• Description: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
Drain to Source On-state Resistance
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
PG.
GS
= 20
CHARACTERISTICS
I
0 V
PG.
G
V
50
= 2 mA
DD
I
D
R
D.U.T.
G
= 25
50
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
DD
L
L
V
ch
DD
SYMBOL
R
R
V
Preliminary Data Sheet D14604EJ1V0DS00
V
| y
t
t
DS(on)1
DS(on)2
I
C
Q
Q
I
C
C
GS(off)
A
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
G
rr
= 25 °C)
|
V
V
V
V
V
V
V
I
R
I
I
I
di/dt = 100 A/ s
V
D
D
F
F
0
GS
GS
DS
DS
DS
GS
DS
G
GS
= 40 A, V
= 80 A , V
= 80 A, V
= 80 A, V
Duty Cycle
PG.
= 10
= 1 s
= 10 V, I
= 10 V, I
= 60 V, V
= 10 V, V
= 10 V, I
= 4.0 V, I
= ±20 V, V
TEST CIRCUIT 2 SWITCHING TIME
TEST CONDITIONS
GS
GS
GS(on)
DD
D
D
D
D
GS
GS
R
= 1 mA
= 40 A
= 0 V
= 0 V,
= 40 A
DS
= 40 A
= 48 V, V
1 %
G
= 0 V
= 0 V, f = 1 MHz
= 10 V, V
D.U.T.
= 0 V
GS
DD
= 10 V
= 30 V,
R
V
L
DD
I
Wave Form
V
Wave Form
D
GS
MIN.
1.5
21
V
I
D
GS
0
0
10 %
10 %
t
TYP.
3200
1200
d(on)
520
260
200
350
2.0
1.0
11
16
43
80
60
10
16
46
66
90 %
t
on
t
MAX.
r
2.5
14
22
10
V
10
I
GS
D
t
d(off)
(on)
2SK3435
t
UNIT
off
m
m
90 %
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
90 %
V
S
V
A
A
t
10 %
f