2SK3479-S NEC [NEC], 2SK3479-S Datasheet

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... Document No. D15077EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION PART NUMBER 2SK3479-S 2SK3479-ZJ 2SK3479 Note TO-220SMD package is produced only = Japan. = 25° ...

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... F(S- di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% ch Data Sheet D15077EJ1V0DS 2SK3479 MIN. TYP. MAX. UNIT 1 11000 pF 1100 pF 540 ...

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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 125 100 140 160 1000 10 m 100 Pulse Width - s Data Sheet D15077EJ1V0DS 2SK3479 100 120 140 160 T - Case Temperature - ˚ 83.3˚C/W th(ch- 1˚C/W th(ch-C) Single Pulse 100 1000 ...

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... V GS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0 1000 Data Sheet D15077EJ1V0DS 2SK3479 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE V = 4.5 V Pulsed Drain to Source Voltage - V DS Pulsed Gate to Source Voltage - V ...

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... C oss rss G 1 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 160 120 100 Q Data Sheet D15077EJ1V0DS 2SK3479 0 V 1.5 1.0 0.5 t d(off) t d(on 100 I - Drain Current - 100 ...

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... 100 Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting T - Starting Channel Temperature - ˚C ch Data Sheet D15077EJ1V0DS 2SK3479 100 125 150 ...

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... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15077EJ1V0DS 2SK3479 4.8 MAX. 1.3±0.2 0.5±0.2 2.8±0.2 1 ...

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... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3479 The M8E 00. 4 ...