2SK3505-01 SANYO [Sanyo Semicon Device], 2SK3505-01 Datasheet - Page 2

• Manufacturer Part Number: 2SK3505-01
• Description: N CHANNEL SILICON POWER MOSFET
• Manufacturer: SANYO [Sanyo Semicon Device]

2SK3505-01MR
Characteristics
100
0.1
80
70
60
50
40
30
20
10
10
30
28
26
24
22
20
18
16
14
12
10
0
1
8
6
4
2
0
0.1
0
0
Allowable Power Dissipation
PD=f(Tc)
Typical Transconductance
Typical Output Characteristics
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
2
25
4
6
50
8
1
Tc [ C]
10
VDS [V]
ID [A]
75
12
8V
14
100
10V
20V
16
10
VGS=6.5V
125
18
7.5V
7.0V
20
150
22
300
250
200
150
100
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
50
1
0
0
0
0
Typical Drain-Source on-state Resistance
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=14A
Typical Transfer Characteristic
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
VGS=6.5V
1
25
5
2
3
FUJI POWER MOSFET
10
50
starting Tch [ C]
4
7.0V
VGS[V]
ID [A]
15
75
5
6
100
20
7
8
7.5V
125
25
8V
10V
9
20V
150
10
30
2