2SK3933-01S FUJI [Fuji Electric], 2SK3933-01S Datasheet - Page 3

• Manufacturer Part Number: 2SK3933-01S
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3933-01L,S,SJ
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
10
10
10
10
10
10
3
2
1
0
4
3
2
1
0
10
10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
-50
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
-1
-25
10
0
0
tf
tr
10
0
25
VDS [V]
ID [A]
td(on)
Tch [
10
50
max.
1
min.
td(off)
°
C]
75
10
Ciss
Crss
Coss
1
100
10
2
µ
125
A
Ω
150
10
10
2
3
100
500
450
400
350
300
250
200
150
100
0.1
14
12
10
10
50
1
8
6
4
2
0
0
0.00
0
0
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
Typical Gate Charge Characteristics
VGS=f(Qg):ID=11A,Tch=25
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V
I
I
I
AS
AS
AS
=6.6A
=4.4A
=11A
0.25
25
10
0.50
µ
50
s pulse test,Tch=25
starting Tch [
FUJI POWER MOSFET
400V
VSD [V]
Qg [nC]
Vcc= 100V
250V
0.75
75
20
°
C]
1.00
100
°
C
30
1.25
125
°
C
1.50
150
40
3