2N60Z UTC [Unisonic Technologies], 2N60Z Datasheet

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2N60Z

Manufacturer Part Number
2N60Z
Description
2A, 600V N-CHANNEL POWER MOSFET
Manufacturer
UTC [Unisonic Technologies]
Datasheet

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Part Number:
2N60ZG
Manufacturer:
华奥DHA
Quantity:
20 000
Part Number:
2N60ZL
Manufacturer:
华奥DHA
Quantity:
20 000
2N60Z
2A, 600V N-CHANNEL
POWER MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
* R
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
DS(ON)
The UTC 2N60Z is a high voltage power MOSFET and is
ORDERING INFORMATION
DESCRIPTION
FEATURES
SYMBOL
2N60ZL-TM3-T
2N60ZL-TN3-R
2N60ZL-TF3-T
2N60ZL-TN3-T
= 5Ω@V
Lead Free
GS
UNISONIC TECHNOLOGIES CO., LTD
Ordering Number
= 10V
2N60ZG-TM3-T
2N60ZG-TN3-R
2N60ZG-TN3-T
2N60ZG-TF3-T
Halogen Free
RSS
= typical 5.0 pF)
TO-220F
Package
TO-251
TO-252
TO-252
G
G
G
Pin Assignment
G
1
D
D
D
D
2
S
S
S
S
3
Power MOSFET
Tape Reel
Packing
Tube
Tube
Tube
QW-R502-829.B
1 of 6

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2N60Z Summary of contents

Page 1

... N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient converters and bridge circuits ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220F Power Dissipation TO-251/TO-252 Junction Temperature Operating Temperature Storage Temperature Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...

Page 3

... ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient △BV ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS ...

Page 4

... TEST CIRCUITS AND WAVEFORMS D.U. P.W. (Driver (D.U.T (D.U.T.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com. Driver * dv/dt controlled controlled by pulse period Same Type SD * D.U.T.-Device Under Test as D.U.T. Peak Diode Recovery dv/dt Test Circuit Period I , Body Diode Forward Current FM Body Diode Reverse Current ...

Page 5

... TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET V DS 90% 10 D(ON) D(OFF Switching Waveforms 10V Charge Gate Charge Waveform ...

Page 6

... TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 250 200 150 100 200 400 600 Drain-Source Breakdown Voltage, BV UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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