2N60Z UTC [Unisonic Technologies], 2N60Z Datasheet - Page 3

• Manufacturer Part Number: 2N60Z
• Description: 2A, 600V N-CHANNEL POWER MOSFET
• Manufacturer: UTC [Unisonic Technologies]

2N60Z
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient △BV
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
ELECTRICAL CHARACTERISTICS
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
Forward
Reverse
SYMBOL
R
V
BV
t
t
C
C
D(OFF)
C
D (ON)
Q
I
I
GS(TH)
DS(ON)
Q
Q
V
DSS
Q
I
I
DSS
GSS
t
(T
OSS
RSS
t
SD
SM
t
ISS
SD
R
GS
GD
rr
RR
DSS
F
G
J
/ T
△
=25°С, unless otherwise specified)
J
V
V
V
V
I
V
V
V
f =1MHz
V
R
V
I
V
V
di/dt = 100 A/μs (Note 1)
D
D
GS
DS
GS
GS
DS
GS
DS
DD
DS
GS
GS
=250μA, Referenced to 25°C
G
=2.4A (Note 1, 2)
=25Ω (Note 1, 2)
=480V, V
=25V, V
=300V, I
= 600V, V
= V
= 0V, I
= 20V, V
= -20V, V
= 10V, I
= 0 V, I
= 0 V, I
TEST CONDITIONS
GS
, I
D
SD
SD
D
D
GS
= 250μA
D
DS
GS
= 250μA
DS
=1A
=2.4A,
GS
= 2.0 A
= 2.4A,
=0V,
=10V,
= 0V
= 0V
= 0V
MIN TYP MAX UNIT
600
2.0
Power MOSFET
0.72
270
180
9.0
1.6
4.3
0.4
3.6
40
10
25
20
25
5
QW-R502-829.B
350
4.0
1.4
2.0
8.0
10
50
30
60
50
60
11
-5
5
5
7
3 of 6
V/°С
μA
μA
μA
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
A
A