2SC3824A PANASONIC [Panasonic Semiconductor], 2SC3824A Datasheet
2SC3824A
Manufacturer Part Number
2SC3824A
Description
Silicon NPN triple diffusion planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.2SC3824A.pdf
(4 pages)
Power Transistors
2SC3824, 2SC3824A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• High-speed switching
• High collector-base voltage (Emitter open) V
• I type package enabling direct soldering of the radiating fin to the
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage 2SC3824
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
printed circuit board, etc. of small electronic equipment
Parameter
Parameter
2SC3824A
T
a
2SC3824
2SC3824A
= 25°C
C
Symbol
V
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
I
T
V
CBO
CEO
EBO
C
CES
CP
I
I
h
h
C
stg
CE(sat)
BE(sat)
C
CBO
EBO
t
t
j
f
CEO
FE1
FE2
stg
t
on
= 25°C
T
f
−55 to +150
CBO
Rating
I
V
V
V
V
I
I
V
I
I
V
C
C
C
C
B1
900
900
800
900
150
CE
1.3
CB
EB
CE
CE
CC
15
= 1 mA, I
= 0.2 A, I
= 0.2 A, I
= 0.2 A
7
1
2
= 0.04 A, I
SJD00113AED
= 7 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 900 V, I
= 250 V
B
B
B
C
C
C
Conditions
C
Unit
= 0
= 0.04 A
= 0.04 A
= 0
= 0.05 A
= 0.5 A
°C
°C
W
B2
V
V
V
V
A
A
E
= 0.05 A, f = 1 MHz
= 0
= − 0.08 A
Note) Self-supported type package is also prepared.
1
7.0
4.6
Min
800
900
6
3
2
±0.3
±0.4
3
2.3
1.1
0.75
3.0
2.0
Typ
±0.2
±0.1
4
±0.2
±0.2
±0.1
0.4
Max
±0.1
3.5
1.5
1.0
1.0
3.0
1.0
50
50
±0.2
I-G1 Package
1: Base
2: Collector
3: Emitter
0˚ to 0.15˚
0.9
Unit: mm
0˚ to 0.15˚
±0.1
MHz
Unit
µA
µA
µs
µs
µs
V
V
V
1
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2SC3824A Summary of contents
Page 1
... Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) V • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ ...
Page 2
... (1)T =Ta C (3)Without heat sink (P =1.3W 120 160 Ambient temperature T (°C) a BE(sat 25˚ =–25˚C C 100˚C 0.1 0.01 0.01 0.1 1 Collector current I (A) C stg f C 100 Pulsed t ...
Page 3
... Time t (s) Safe operation area (Reverse bias) measurement circuit (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) ( SJD00113AED 2SC3824, 2SC3824A L T.U − CLAMP 3 ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...