SIHG17N60D VISHAY [Vishay Siliconix], SIHG17N60D Datasheet

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SIHG17N60D

Manufacturer Part Number
SIHG17N60D
Description
D Series Power MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SIHG17N60D.pdf (8 pages)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
c. 1.6 mm from case.
d. I
S12-0685-Rev. A, 02-Apr-12
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V) at T
(nC)
 I
= 50 V, starting T
D
max. at 25 °C ()
, starting T
TO-247AC
J
max.
www.vishay.com
J
= 25 °C.
d
a
G
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
D
= 25 °C, L = 2.3 mH, R
S
J
= 150 °C)
b
V
GS
= 10 V
D Series Power MOSFET
G
Single
For technical questions, contact:
650
90
14
22
N-Channel MOSFET
g
= 25 , I
C
c
= 25 °C, unless otherwise noted)
0.340
V
D
S
GS
AS
at 10 V
= 12 A.
T
J
for 10 s
= 125 °C
1
T
T
TO-247AC
SiHG17N60D-E3
SiHG17N60D-GE3
C
C
= 100 °C
= 25 °C
FEATURES
• Optimal Design
• Optimal Efficiency and Operation
• Material categorization: For definitions of compliance
APPLICATIONS
• Consumer Electronics
• Lighting
• Industrial
• SMPS
please see
- Low Area Specific On-Resistance
- Low Input Capacitance (C
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R
- Fast Switching
- Displays (LCD or Plasma TV)
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
hvm@vishay.com
SYMBOL
www.vishay.com/doc?91000
T
dV/dt
J
www.vishay.com/doc?99912
V
V
E
I
, T
P
DM
I
GS
DS
D
AS
D
stg
- 55 to + 150
iss
LIMIT
165.6
277.8
± 30
10.7
2.22
600
300
0.2
17
48
24
)
on
SiHG17N60D
Vishay Siliconix
Document Number: 91496
x Q
g
UNIT
W/°C
V/ns
mJ
°C
°C
W
V
A

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SIHG17N60D Summary of contents

Page 1

... SYMBOL ° 100 ° 125 ° for  For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG17N60D Vishay Siliconix ) iss www.vishay.com/doc?99912 LIMIT UNIT V 600 DS V ± 10 2.22 W/°C E 165 ...

Page 2

... junction diode ° ° dI/dt = 100 A/μ RRM 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG17N60D Vishay Siliconix MAX. UNIT - 62 °C/W - 0.45 MIN. TYP. MAX. 600 - - = 0 ± 100 = 125 ° ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage 0 Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG17N60D Vishay Siliconix 100 120 140 160 T - Junction Temperature (° iss C oss C ...

Page 4

... BVDSS Limited 550 1000 -60 -40 -20 is specified DS(on) Fig Typical Drain-to-Source Voltage vs. Temperature 0.001 0.01 Square Wave Pulse Duration (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG17N60D Vishay Siliconix 50 75 100 125 150 T - Temperature (° 100 120 140 ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Unclamped Inductive Waveforms Fig Basic Gate Charge Waveform For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG17N60D Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U.T. ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG17N60D Vishay Siliconix + + Document Number: 91496 ...

Page 7

TO-247AC (HIGH VOLTAGE E MILLIMETERS DIM. MIN. MAX. A ...

Page 8

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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