SIB408DK VISHAY [Vishay Siliconix], SIB408DK Datasheet

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SIB408DK

Manufacturer Part Number
SIB408DK
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIB408DK-T1-GE3
Manufacturer:
FOCALTECH
Quantity:
3 000
Part Number:
SIB408DK-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
1 820
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 64828
S09-0859-Rev. A, 18-May-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
1.60 mm
6
PowerPAK SC-75-6L-Single
(V)
D
5
D
4
S
0.050 at V
0.040 at V
D
1
R
S
DS(on)
D
1.60 mm
2
GS
GS
G
(Ω)
J
3
= 4.5 V
= 10 V
= 150 °C)
b, f
Ordering Information: SiB408DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 30-V (D-S) MOSFET
I
D
Part # code
7
7
(A)
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
2.9 nC
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A E X
X X X
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• 100 % R
• 100 % UIS Tested
• Notebook
Symbol
Symbol
T
R
R
Definition
SC-75 Package
- Small Footprint Area
- Low On-Resistance
Compliant to RoHS Directive 2002/95/EC
- Load Switch
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
7.5
41
- 55 to 150
4.8
2.4
1.6
Limit
± 20
6
2
260
8.4
30
7
7
20
7
10
13
b, c
b, c
5
a
a
b, c
a
b, c
b, c
Maximum
9.5
51
Vishay Siliconix
G
SiB408DK
®
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
D
S
mJ
°C
W
V
A
1

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SIB408DK Summary of contents

Page 1

... 1. 1. Ordering Information: SiB408DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... SiB408DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V thru 1.5 2.0 500 400 300 200 100 1.7 1.5 1.3 1.1 = 22.5 V 0.9 0 SiB408DK Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiB408DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 ° 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.10 0.08 0. °C 0.04 J 0.02 0.00 0.8 1.0 1 250 µA ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64828 S09-0859-Rev. A, 18-May- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB408DK Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com ...

Page 6

... SiB408DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

PowerPAK SC75-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.18 0.25 0.33 C 0.15 0.20 0.25 D 1.53 1.60 1.70 D1 0.57 0.67 ...

Page 8

RECOMMENDED PAD LAYOUT FOR PowerPAK 0.250 (0.01) 0.300 (0.012) (0.043) 1.700 (0.067) 1.100 0.300 (0.012) Return to Index Document Number: 70488 Revision: 21-Jan-08 ® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.400 (0.016) 0.370 (0.015) 0.200 (0.008) 0.545 (0.021) 1 0.250 ...

Page 9

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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