SIB410DK VISHAY [Vishay Siliconix], SIB410DK Datasheet - Page 3

• Manufacturer Part Number: SIB410DK
• Description: N-Channel 30 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 67020
S10-2249-Rev. A, 04-Oct-10
0.06
0.05
0.04
0.03
0.02
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
4
0
0
0
0
I
D
0.5
= 4.3 A
4
2
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
- Total Gate Charge (nC)
1.0
I
V
GS
D
DS
Gate Charge
- Drain Current (A)
= 5 V thru 2 V
8
4
= 7.5 V
1.5
V
V
V
V
GS
GS
GS
DS
12
= 1 V
= 1.8 V
6
= 15 V
= 2.5 V
2.0
V
V
V
DS
GS
V
GS
GS
16
= 24 V
= 4.5 V
8
= 1.5 V
2.5
= 0.5 V
New Product
20
3.0
10
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
I
D
= 3.8 A
5
0.3
V
V
C
DS
GS
Transfer Characteristics
0
oss
T
J
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
C
10
= 125 °C
Capacitance
25
0.6
C
V
T
iss
C
GS
= 25 °C
15
50
Vishay Siliconix
= 4.5 V, V
0.9
SiB410DK
75
20
GS
www.vishay.com
100
= 2.5 V
T
V
C
1.2
GS
= - 55 °C
25
= 1.8 V
125
150
1.5
30
3