SIB456DK VISHAY [Vishay Siliconix], SIB456DK Datasheet - Page 3

• Manufacturer Part Number: SIB456DK
• Description: N-Channel 100 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-1133-Rev. A, 21-May-12
0.500
0.400
0.300
0.200
0.100
0.000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
On-Resistance vs. Drain Current and Gate Voltage
10
6
5
4
3
2
1
0
8
6
4
2
0
0.0
0
0
www.vishay.com
I
0.5
D
1
= 2.7 A
Output Characteristics
V
DS
V
1
DS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Drain-to-Source Voltage (V)
Q
Gate Charge
g
1.0
= 25 V
I
2
- Total Gate Charge (nC)
D
- Drain Current (A)
V
V
GS
DS
1.5
= 4.5 V
3
= 50 V
V
2
GS
For technical questions, contact:
= 10 V thru 5 V
V
2.0
DS
4
= 80 V
V
V
GS
GS
3
V
= 10 V
GS
= 4 V
2.5
5
= 3 V
New Product
3.0
6
4
3
[e-mail]
2.0
1.6
1.2
0.8
0.4
0.0
200
160
120
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
0.0
- 50
On-Resistance vs. Junction Temperature
0
www.vishay.com/doc?91000
- 25
1.0
Transfer Characteristics
C
V
rss
4
V
GS
I
T
DS
D
0
J
- Gate-to-Source Voltage (V)
= 1.9 A
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
Capacitance
C
T
C
25
2.0
C
iss
oss
8
= 125 °C
T
C
50
= 25 °C
Vishay Siliconix
3.0
Document Number: 62715
12
75
V
SiB456DK
GS
T
100
C
= 10 V
= - 55 °C
4.0
16
V
GS
125
= 4.5 V
5.0
150
20