SUP90N06-6M0P_09 VISHAY [Vishay Siliconix], SUP90N06-6M0P_09 Datasheet
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SUP90N06-6M0P_09
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SUP90N06-6M0P_09 Summary of contents
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... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.006 O-220AB Ordering Information: SUP90N06-6m0P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...
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... SUP90N06-6m0P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... V 0.0055 °C C 0.0053 25 °C 0.0051 125 °C 0.0049 0.0047 0.0045 SUP90N06-6m0P Vishay Siliconix 100 125 ° °C 25 ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUP90N06-6m0P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g On-Resistance vs. Junction Temperature 100 150 °C 10 1.0 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Gate Charge ...
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... Document Number: 69536 S09-0703-Rev. B, 27-Apr-09 1000 100 10 0.1 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUP90N06-6m0P Vishay Siliconix Limited DS(on °C C Single Pulse 0 Drain-to-Source Voltage ( ...
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TO-220AB b( e(1) Document Number: 71195 Revison: 01-Nov-10 A DIM Ø b( e(1) F H(1) J(1) L L(1) Ø ECN: X10-0416-Rev. M, ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...