SUP90P06-09L_06 VISHAY [Vishay Siliconix], SUP90P06-09L_06 Datasheet - Page 2

• Manufacturer Part Number: SUP90P06-09L_06
• Description: P-Channel 60-V (D-S) 175 Celsius MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model SUP90P06-09L
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
c
c
b
Parameter
c
c
c
c
c
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
oss
SD
rss
fs
iss
gs
gd
r
f
g
V
I
D
V
V
V
DS
≅ −90 A, V
GS
GS
GS
= −30 V, V
= −10V, I
= −10V, I
= 0 V, V
V
V
V
V
V
V
DD
DS
DS
GS
I
GS
DS
Test Condition
S
= −30 V, R
= −50 A, V
= V
= −5 V, V
= −4.5 V, I
= −15 V, I
= −10 V, I
GEN
GS
DS
D
D
GS
, I
= −30 A, T
= −30 A, T
= −25 V, f = 1 MHz
= −10 V, R
= −10 V, I
D
= − 250 µA
GS
D
D
GS
L
D
= 0.33 Ω
= −30 A
= −30 A
= −10 V
= −20 A
= 0 V
J
J
D
= 125°C
= 175°C
G
= −90 A
= 2.5 Ω
Simulated
0.0074
0.0116
0.0139
0.0092
Data
−0.91
8417
644
970
801
176
255
102
352
2.1
76
40
36
13
Measured
S-52635Rev. B, 02-Jan-06
0.0074
0.0094
Data
9200
Document Number: 73029
975
760
160
190
140
300
−1
40
36
20
Unit
pF
nC
ns
V
A
Ω
S
V