TN2404K-T1 VISHAY [Vishay Siliconix], TN2404K-T1 Datasheet - Page 2

• Manufacturer Part Number: TN2404K-T1
• Description: N-Channel 240 -V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TN2404K/TN2404KL/BS107KL
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn On Time
Turn-On Time
turn-Off Time
turn-Off Time
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW v300 ms duty cycle v2%.
a
Parameter
b
b
b
b
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
(BR)DSS
I
I
DS(on)
t
t
I
I
I
GS(th)
D(
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
SD
t
t
(
fs
gs
gd
r
r
g
)
)
I
V
D
DS
] 0.3 A, V
= 192 V, V
V
V
V
V
V
V
V
V
V
V
V
V
Test Conditions
DS
DS
I
DS
DS
DS
DD
DD
GS
GS
GS
GS
S
DS
= 0.3 A, V
= 10 V, V
= 0 V, V
= V
= 192 V, V
= 10 V, V
= 60 V, R
= 60 V, R
= 4.5 V, I
= 0 V, I
= 10 V, I
= 2.5 V, I
= 10 V, I
GEN
GS
GS
, I
= 10 V, R
GS
D
= 10 V, I
D
D
D
GS
GS
L
L
= 100 mA
D
GS
D
= 250 mA
GS
= "20 V
= 0.3 A
= 200 W
= 200 W
= 0.3 A
= 0.1 A
= 0.2 A
= 0 V
= 4.5 V
=10 V
= 0 V
D
T
G
J
= 0.5 A
= 25 W
= 55_C
Min
240
0.8
0.8
0.5
Limits
Typ
1.65
4.87
0.56
1.53
257
2.2
2.3
2.4
1.6
0.8
12
35
16
5
a
S-41761—Rev. B , 04-Oct-04
Document Number: 72225
"100
Max
2.0
1.2
10
10
20
60
25
1
4
4
6
8
Unit
nA
mA
mA
nC
nS
nS
V
V
A
A
W
S
V