SI7434DP_06 VISHAY [Vishay Siliconix], SI7434DP_06 Datasheet - Page 2

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SI7434DP_06

Manufacturer Part Number
SI7434DP_06
Description
N-Channel 250-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
SPICE Device Model Si7434DP
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
SD
fs
gs
gd
r
f
g
V
DS
I
D
≅ 4 A, V
= 100 V, V
V
V
V
V
V
Test Condition
V
I
DD
DS
DS
S
GS
DS
GS
= 2.8 A, V
= 100 V, R
= V
= 10 V, I
= 15 V, I
≥ 5 V, V
= 6 V, I
GEN
GS
GS
, I
= 10 V, R
= 10 V, I
D
D
GS
D
D
= 250 µA
GS
= 3.7 A
L
= 3.8 A
= 3.8 A
= 10 V
= 0 V
= 25 Ω
D
G
= 3.8 A
= 6 Ω
Simulated
Data
0.131
0.133
35.5
10.5
0.82
1.6
6.8
38
11
19
30
43
7
Measured
S-60147Rev. B, 13-Feb-06
Data
0.129
0.131
0.75
10.5
6.8
14
34
16
23
47
19
Document Number: 72666
Unit
nC
ns
V
A
S
V

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