SI7456DDP VISHAY [Vishay Siliconix], SI7456DDP Datasheet

no-image

SI7456DDP

Manufacturer Part Number
SI7456DDP
Description
N-Channel 100 V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7456DDP-T1-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI7456DDP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7456DDP-T1-GE3
Quantity:
12 000
Company:
Part Number:
SI7456DDP-T1-GE3
Quantity:
100
Company:
Part Number:
SI7456DDP-T1-GE3
Quantity:
70 000
Company:
Part Number:
SI7456DDP-T1-GE3
Quantity:
9 000
Company:
Part Number:
SI7456DDP-T1-GE3
Quantity:
9 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 67869
S12-1261-Rev. A, 21-May-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
100
(V)
Ordering Information:
Si7456DDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
C
6.15 mm
D
= 25 °C.
0.024 at V
0.031 at V
0.023 at V
7
R
D
DS(on)
6
D
5
() Max.
GS
GS
GS
D
J
= 7.5 V
= 4.5 V
= 10 V
PowerPAK
= 150 °C)
b, f
Bottom View
1
S
N-Channel 100 V (D-S) MOSFET
For technical questions, contact:
2
S
®
3
SO-8
I
S
D
27.8
27.2
5.15 mm
24
(A)
4
This document is subject to change without notice.
G
a
d, e
A
Q
= 25 °C, unless otherwise noted)
Steady State
9.7 nC
g
T
T
T
T
T
T
L =0.1 mH
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t  10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
pmostechsupport@vishay.com
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Material categorization:
• DC/DC Primary Side Switch
• Telecom/Server 48 V,
• Industrial
• Synchronous Rectification
Symbol
Symbol
T
R
R
For definitions of compliance please see
www.vishay.com/doc?99912
Full/Half-Bridge DC/DC
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
g
and UIS Tested
®
Power MOSFET
Typical
2.9
20
- 55 to 150
10.4
8.2
4.5
3.2
Limit
± 20
27.8
22.2
11.2
35.7
22.8
5
100
260
70
25
15
b, c
b, c
b, c
b, c
b, c
Maximum
3.5
25
Vishay Siliconix
G
www.vishay.com/doc?91000
Si7456DDP
N-Channel MOSFET
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI7456DDP

SI7456DDP Summary of contents

Page 1

... Bottom View Ordering Information: Si7456DDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si7456DDP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V 600 300 2 1.7 1.4 1.1 0.8 0 On-Resistance vs. Junction Temperature pmostechsupport@vishay.com This document is subject to change without notice. Si7456DDP Vishay Siliconix = 25 ° 125 ° ° 1.5 3.0 4.5 6.0 7 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 5 10 ...

Page 4

... Si7456DDP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 250 μ 0 100 T - Temperature (°C) J Threshold Voltage 100 10 1 0.1 0.01 For technical questions, contact: www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0 ...

Page 5

... Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper pmostechsupport@vishay.com This document is subject to change without notice. Si7456DDP Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com www.vishay.com/doc?91000 ...

Page 6

... Si7456DDP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

PowerPAK SO-8, (SINGLE/DUAL Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. MIN. A 0.97 A1 0.00 b ...

Page 8

PowerPAK SO-8 Mounting and Thermal Considerations Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over ...

Page 9

AN821 Vishay Siliconix PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those ...

Page 10

THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, Rθ junction-to-foot thermal resistance, Rθ is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device ...

Page 11

AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1.6 I ...

Page 12

RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) 0.050 (1.27) Return to Index Return to Index Document Number: 72599 Revision: 21-Jan-08 ® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.032 (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 ...

Page 13

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

Related keywords