VP2106N3 SUTEX [Supertex, Inc], VP2106N3 Datasheet

VP2106N3

Manufacturer Part Number

VP2106N3

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.VP2106N3.pdf (4 pages)

Current page: 1 of 4
Download datasheet (458Kb)

Ordering Information

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps, memories,

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

†

Distance of 1.6 mm from case for 10 seconds.

MIL visual screening available.

-100V

displays, bipolar transistors, etc.)

-60V

DSS

DGS

ISS

and fast switching speeds

(max)

12Ω

DS(ON)

(min)

-0.5A

D(ON)

VP2106N3

TO-92

P-Channel Enhancement-Mode

Vertical DMOS FETs

—

-55°C to +150°C

Order Number / Package

300°C

± 20V

TO-236AB*

VP2110K1

DGS

DSS

—

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

VP2110ND

Note: See Package Outline section for dimensions.

Die

—

†

TO-236AB

(SOT-23)

top view

where ❋ = 2-week alpha date code

Product marking for SOT-23:

P1A❋

TO-92

S G D

VP2106

VP2110

Related parts for VP2106N3

VP2106N3 Summary of contents

Page 1

... Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. P-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package TO-92 TO-236AB* Die VP2106N3 — — — VP2110K1 VP2110ND Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’ ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-236AB -120mA TO-92 -0.25A * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) Change in V with ...

Page 3

Typical Performance Curves Output Characteristics -2.0 -1.6 -1.2 -0.8 -0 -10 -20 -30 V (volts) DS Transconductance vs. Drain Current 250 25V 200 150 100 -0.2 -0.4 -0.6 I (amperes) D Maximum ...

Page 4

Typical Performance Curves BV Variation with Temperature DSS -1.1 -1.0 -0.9 - (°C) j Transfer Characteristics -1 -25V DS -0.8 -0.6 -0.4 -0 (volts) GS Capacitance vs. Drain-to-Source Voltage ...

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