VP2106N3 SUTEX [Supertex, Inc], VP2106N3 Datasheet - Page 4

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VP2106N3

Manufacturer Part Number
VP2106N3
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
Typical Performance Curves
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
-1.1
-1.0
-0.9
100
-1.0
-0.8
-0.6
-0.4
-0.2
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
-2
Transfer Characteristics
-10
= -25V
0
f = 1MHz
Variation with Temperature
V
GS
V
-4
DS
T
(volts)
j
-20
50
(°C)
(volts)
-6
100
-30
-8
C
C
RSS
ISS
150
-10
-40
4
1.4
1.2
1.0
0.8
0.6
-10
20
16
12
-8
-6
-4
-2
8
4
0
0
-50
0
0
V
(th)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
35 pF
-0.2
R
1235 Bordeaux Drive, Sunnyvale, CA 94089
V
0
TEL: (408) 744-0100 • FAX: (408) 222-4895
V
DS(ON)
DS
Q
GS
DS
G
I
= -10V
D
= -5V
Variation with Temperature
(nanocoulombs)
-0.4
(amperes)
@ -10V, 0.5A
T
j
101 pF
1.0
50
(°C)
V
DS
-0.6
=
-40V
V
(th)
100
V
GS
-0.8
@ 1mA
= -10V
www.supertex.com
VP2106/VP2110
-1.0
150
2.0
2.0
1.6
1.2
0.8
0.4
0
11/12/01

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