SI6901DQ VISHAY [Vishay Siliconix], SI6901DQ Datasheet
SI6901DQ
Manufacturer Part Number
SI6901DQ
Description
Bi-Directional P-Channel 12-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SI6901DQ.pdf
(3 pages)
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Part Number:
SI6901DQ-T1-E3
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VISHAY
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12 847
CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72915
23-May-04
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS.
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
Bi-Directional P-Channel 12-V (D-S) MOSFET
The subcircuit
SPICE Device Model Si6901DQ
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1
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SI6901DQ Summary of contents
Page 1
... Document Number: 72915 23-May-04 SPICE Device Model Si6901DQ • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...
Page 2
... SPICE Device Model Si6901DQ Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
Page 3
... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 72915 23-May-04 SPICE Device Model Si6901DQ =25°C UNLESS OTHERWISE NOTED) J Vishay Siliconix www.vishay.com 3 ...