SI7460DP_09 VISHAY [Vishay Siliconix], SI7460DP_09 Datasheet

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SI7460DP_09

Manufacturer Part Number
SI7460DP_09
Description
N-Channel 60-V (D-S) Fast Switching MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free)
THERMAL RESISTANCE RATINGS
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
60
8
(V)
6.15 mm
D
7
D
6
D
PowerP AK SO-8
Bottom V iew
5
N-Channel 60-V (D-S) Fast Switching MOSFET
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0096 at V
0.012 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
GS
a
GS
2
(Ω)
= 4.5 V
S
= 10 V
3
S
a
5.15 mm
4
G
a
b,c
A
= 25 °C, unless otherwise noted
I
D
Steady State
18
16
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
Symbol
Symbol
T
R
R
Available
New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile
J
V
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
GS
DS
AS
D
S
D
stg
®
Power MOSFETs
G
Typical
N-Channel MOSFET
10 s
4.3
5.4
3.4
1.0
18
14
18
52
- 55 to 150
D
S
± 20
125
260
60
40
50
Steady State
Maximum
1.6
1.9
1.2
1.3
11
23
65
Vishay Siliconix
8
Si7460DP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7460DP_09 Summary of contents

Page 1

N-Channel 60-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.0096 0.012 4 PowerP AK SO ...

Page 2

Si7460DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 0.016 0.012 0.008 0.004 0.000 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

Si7460DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 = 250 μ 0.4 0.0 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 ...

Page 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. ...

Page 6

PowerPAK SO-8, (SINGLE/DUAL Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. MIN. A 0.97 A1 0.00 b ...

Page 7

PowerPAK SO-8 Mounting and Thermal Considerations Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over ...

Page 8

AN821 Vishay Siliconix PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those ...

Page 9

THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, Rθ junction-to-foot thermal resistance, Rθ is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device ...

Page 10

AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1.6 I ...

Page 11

RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) 0.050 (1.27) Return to Index Return to Index Document Number: 72599 Revision: 21-Jan-08 ® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.032 (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 ...

Page 12

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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