SIA907EDJT-T1-GE3 VISHAY [Vishay Siliconix], SIA907EDJT-T1-GE3 Datasheet

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SIA907EDJT-T1-GE3

Manufacturer Part Number
SIA907EDJT-T1-GE3
Description
Dual P-Channel 20 V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 67874
S11-0862-Rev. A, 02-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
Thin PowerPAK SC-70-6L-Dual
6
2.05 mm
D1
5
G2
0.057 at V
0.095 at V
4
S2
D1
R
DS(on)
GS
GS
J
S1
()
= - 4.5 V
= - 2.5 V
D2
= 150 °C)
b, f
1
Dual P-Channel 20 V (D-S) MOSFET
G1
2.05 mm
2
D2
3
I
- 4.5
- 4.5
D
0.6 mm
(A)
This document is subject to change without notice.
a
a
d, e
A
Part # code
Q
= 25 °C, unless otherwise noted)
Steady State
4.9 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
t  5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
D M X
X X X
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced Thin PowerPAK
• Typical ESD Protection: 1500 V HBM
• High Speed Switching
• Compliant to RoHS Directive 2002/95/EC
• Charger Switch, Load Switch for Portable Devices
• Battery Management
Symbol
Symbol
T
R
R
J
V
V
Definition
SC-70 Package
- Small Footprint Area
- Low On-Resistance
I
P
, T
DM
I
I
thJC
Lot Traceability
and Date code
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
G
12.5
1
52
P-Channel MOSFET
- 55 to 150
- 4.5
- 3.8
- 1.6
1.9
1.2
Limit
- 4.5
- 4.5
- 4.5
± 12
- 20
- 15
260
7.8
5
a, b, c
b, c
b, c
b, c
b, c
a
a
a
S
Maximum
D
1
1
65
16
Vishay Siliconix
SiA907EDJT
www.vishay.com/doc?91000
G
2
P-Channel MOSFET
www.vishay.com
®
°C/W
Unit
Unit
°C
W
V
A
S
D
2
2
1

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SIA907EDJT-T1-GE3 Summary of contents

Page 1

... 2. 2.05 mm Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiA907EDJT Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... 1 2.0 2.5 3.0 1000 800 600 400 200 This document is subject to change without notice. SiA907EDJT Vishay Siliconix T = 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-to-Source Voltage ° 125 °C ...

Page 4

... SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 4 Total Gate Charge (nC) g Gate Charge 100 10 = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage ...

Page 5

... Safe Operating Area, Junction-to-Ambient 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper This document is subject to change without notice. SiA907EDJT Vishay Siliconix 100 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www ...

Page 6

... SiA907EDJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

CASE OUTLINE for PowerPAK D Terminal #1 Topside View Z Side View SINGLE PAD DIM. MILLIMETERS MIN. NOM. MAX. A 0.525 0.60 0.65 A1 0.00 - 0.05 b 0.23 0.30 0.38 C 0.15 0.20 0.25 D 1.98 2.05 2.15 D2 ...

Page 8

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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