M52S64322A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S64322A-10BG Datasheet

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M52S64322A-10BG

Manufacturer Part Number
M52S64322A-10BG
Description
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
ESMT
Mobile SDRAM
FEATURES
GENERAL DESCRIPTION
32 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the
same device to be useful for a variety of high bandwidth, high performance memory system applications.
PIN ASSIGNMENT
Elite Semiconductor Memory Technology Inc.
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
- PASR (Partial Array Self Refresh)
- TCSR (Temperature Compensated Self Refresh)
- DS (Driver Strength)
2.5V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
EMRS cycle with address
All inputs are sampled at the positive going edge of the
system clock
Special function support
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
The M52S64322A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by
G
M
A
B
C
D
E
F
H
K
L
N
P
R
J
VDDQ DQ31
DQM1
VDDQ DQ8
DQ26 DQ24 VSS
DQ28 VDDQ VSSQ
VSSQ DQ27 DQ25
VSSQ DQ29 DQ30
VSSQ DQ10 DQ9
VSSQ DQ12 DQ14
DQ13 DQ15 VSS
DQ11 VDDQ VSSQ
VSS DQM3
CLK
A4
A7
1
CKE
NC
A5
A8
2
90 Ball FBGA
VSS
NC
NC
NC
A3
A6
A9
3
4
5
ORDERING INFORMATION
M52S64322A-7.5BG
M52S64322A-10BG
PRODUCT NO.
6
VDDQ VSSQ DQ19
VDDQ VSSQ DQ4
DQ22 DQ20 VDDQ
DQ17 DQ18 VDDQ
VDD DQ23 DQ21
CAS
VDD
DQ6
DQ1
VDD
A10
BA0
NC
NC
A2
7
DQM2 VDD
DQ16 VSSQ
BA1
DQ7 VSSQ
DQ5 VDDQ
DQ3 VDDQ
DQ0
512K x 32 Bit x 4 Banks
WE
CS
A0
Mobile Synchronous DRAM
8
DQM0
RAS
DQ2
NC
A1
9
133MHz
100MHz
FREQ.
MAX
Publication Date: Aug. 2009
Revision: 1.3
M52S64322A
90 Ball FBGA
90 Ball FBGA
PACKAGE
Comments
1/47
Pb-free
Pb-free

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