F25L16PA-100DG ESMT [Elite Semiconductor Memory Technology Inc.], F25L16PA-100DG Datasheet - Page 25

• Manufacturer Part Number: F25L16PA-100DG
• Description: 3V Only 16 Mbit Serial Flash Memory with Dual
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
Notes:
Elite Semiconductor Memory Technology Inc.
Sector Erase Time
Block Erase Time
Chip Erase Time
Byte Programming Time ( for AAI program )
Page Programming Time
Byte Programming Time – 1st byte
( for page program )
Byte Programming Time – after 1st byte
( for page program )
Chip Programming Time
Erase/Program Cycles
Data Retention
ERASE AND PROGRAMMING PERFORMANCE
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 3V.
3. Maximum values measured at 85°C, 2.7V.
4. For multiple bytes after first byte within a page, T
= number of bytes programmed. T
issuing a page program instruction.
Parameter
1
4
4
BP1
(typical) is also the recommended delay time before reading the status register after
Symbol
T
T
T
T
T
T
T
BP1
BP2
SE
BE
CE
BP
PP
BPN
= T
100,000
BP1
Typ
100
1.5
90
10
50
20
1
7
6
+ T
2
BP2 *N
Limit
(typical) and T
Max
200
150
100
30
30
12
2
5
-
-
3
BPN
Cycles
Years
= T
Publication Date: Jul. 2009
Unit
Revision: 1.4
ms
ms
us
us
us
s
s
s
BP1
+ T
BP2 *N
F25L16PA
(max), where N
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