FM200TU-2A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], FM200TU-2A_09 Datasheet - Page 2

• Manufacturer Part Number: FM200TU-2A_09
• Description: MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ELECTRICAL CHARACTERISTICS
NTC THERMISTOR PART
ABSOLUTE MAXIMUM RATINGS
*
*
*
*
*
*
*
*
V
V
I
I
I
I
I
P
P
T
T
V
I
V
I
r
(chip)
V
(chip)
R
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
R
B*
1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi).
2: Pulse width and repetition rate should be such that the device channel temperature (T
3: Case Temperature (Tc’) measured point is just under the chips. If use this value, R
4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
5: T
6:
7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING.
8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
D(rms)
DM
DA
S(rms)
SM
DSS
GSS
d(on)
r
d(off)
f
rr
DS(ON)
Symbol
Symbol
Symbol
ch
stg
DSS
GSS
D
D
iso
GS(th)
DS(ON)
(lead)
iss
oss
rss
SD
th(ch-c)
th(ch-c’)
th(c-f)
th(c’-f’)
Th
G
*
rr
B = In(
R
R
6
1
*
*
*
25
50
*
Th
4
4
—
—
*
1
*
1
6
: resistance at absolute temperature T
: resistance at absolute temperature T
1
is thermistor temperature.
*
1
R
R
25
50
)/(
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
Resistance
B Constant
T
1
25
T
1
50
Parameter
)
Item
Item
25
50
(T
[K]: T
[K]: T
(T
ch
ch
= 25°C unless otherwise specified.)
G-S Short
D-S Short
T
Pulse*
L = 10µH Pulse*
Pulse*
T
T
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
V
I
V
I
V
I
V
I
terminal-chip
V
V
V
V
R
I
I
MOSFET part (1/6 module)*
MOSFET part (1/6 module)*
Case to heat sink, Thermal grease Applied*
Case to heat sink, Thermal grease Applied*
T
Resistance at T
25
50
D
D
D
D
S
S
= 25°C unless otherwise specified.)
C
C
C
Th
DS
GS
GS
GS
DS
GS
DD
DD
G
= 25 [°C]+273.15 = 298.15 [K]
= 50 [°C]+273.15 = 323.15 [K]
= 100A
= 100A, V
= 10mA, V
= 100A
= 100A
= 100A
’ = 137°C*
’ = 25°C*
= 25°C
= 13Ω, Inductive load
= 25°C*
= V
= V
= 15V
= 15V
= 10V
= 0V
= 48V, I
= 48V, I
2
2
DSS
GSS
3
, V
, V
5
D
D
GS
3
DS
= 100A, V
GS
DS
= 100A, V
= 0V
Th
= 10V
2
= 0V
= 0V
= 25°C, 50°C*
Conditions
Conditions
Conditions
GS
GS
2
= 15V
± 15V
7
3
5
th(f-a)
ch
) does not exceed T
should be measured just under the chips.
3,
*
8
T
T
T
T
T
T
8
ch
ch
ch
ch
ch
ch
(1/6 module)
(1/6 module)
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
HIGH POWER SWITCHING USE
ch
max rating.
Min.
Min.
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED PACKAGE
–40 ~ +150
–40 ~ +125
3.5 ~ 4.5
3.5 ~ 4.5
Ratings
FM200TU-2A
Limits
Limits
2500
4000
Typ.
0.24
0.41
1.68
0.09
Typ.
100
±20
100
200
100
100
200
410
560
600
760
100
2.4
4.1
1.2
3.6
0.1
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Max.
Max.
0.33
0.30
0.22
400
300
450
300
250
7.3
1.5
3.3
1.3
—
—
—
—
50
—
—
—
—
—
—
1
7
4
Feb. 2009
N • m
N • m
A
A
V
K/W
Unit
Unit
Unit
mΩ
mΩ
mA
nC
µC
kΩ
µA
nF
°C
°C
ns
ns
W
W
V
V
rms
A
A
rms
A
rms
g
V
V
V
K