FM200TU-2A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], FM200TU-2A_09 Datasheet - Page 3

• Manufacturer Part Number: FM200TU-2A_09
• Description: MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
200
160
120
2.0
1.6
1.2
0.8
0.4
80
40
0
6
5
4
3
2
1
0
0
0
0
0
DRAIN-SOURCE VOLTAGE V
CHANNEL TEMPERATURE T
I
GATE-SOURCE VOLTAGE V
T
D
ch
VOLTAGE VS. TEMPERATURE
20
= 100A
OUTPUT CHARACTERISTICS
DRAIN-SOURCE ON-STATE
DRAIN-SOURCE ON-STATE
= 25°C
VOLTAGE VS. GATE BIAS
0.2
V
4
GS
15V
40
I
= 20V
D
= 50A
60
(TYPICAL)
0.4
(TYPICAL)
(TYPICAL)
8
V
80
GS
0.6
= 12V
12V
12
100
10V
T
120
V
ch
I
I
GS
D
D
0.8
16
= 25°C
= 200A
= 100A
GS
ch
DS
= 15V
140
(°C)
Chip
Chip
Chip
(V)
(V)
9V
160
1.0
20
3
200
150
100
10
10
10
50
0
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
10
2
1
0
5
0
–1
V
T
CHANNEL TEMPERATURE T
V
DRAIN-SOURCE VOLTAGE V
V
I
GATE-SOURCE VOLTAGE V
D
DS
ch
TRANSFER CHARACTERISTICS
GS
DS
VOLTAGE VS. TEMPERATURE
2
20
= 10mA
= 125°C
= 10V
DRAIN-SOURCE VOLTAGE
3 5 7
= 0V
= 10V
7
40
GATE THRESHOLD
CAPACITANCE VS.
HIGH POWER SWITCHING USE
10
60
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
9
2
T
80
ch
3 5 7
= 25°C
INSULATED PACKAGE
11
100
FM200TU-2A
10
C
1
120
rss
2
13
GS
ch
3 5 7
DS
140
(°C)
Chip
(V)
C
C
(V)
oss
iss
160
15
10
2
Feb. 2009