FM200TU-2A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], FM200TU-2A_09 Datasheet - Page 4

• Manufacturer Part Number: FM200TU-2A_09
• Description: MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
20
16
12
–1
–2
8
4
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
1
0
10
10
0
GATE CHARGE CHARACTERISTICS
1
1
I
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
D
= 100A
200
2
2
GATE CHARGE Q
DRAIN CURRENT I
DRAIN CURRENT I
3
3
V
DD
400
HALF-BRIDGE
HALF-BRIDGE
5 7
5 7
(TYPICAL)
= 24V
(TYPICAL)
(TYPICAL)
600
10
10
t
t
t
t
2
E
E
E
2
d(off)
d(on)
r
f
sw(off)
sw(on)
rr
V
800
Conditions:
V
V
R
T
Inductive load
Conditions:
V
V
R
T
Inductive load
2
2
DD
ch
ch
G
DD
GS
DD
GS
G
G
D
D
(nC)
= 13Ω
= 13Ω
= 48V
3
= 125°C
3
= 125°C
(A)
(A)
= 48V
= ±15V
= 48V
= ±15V
1000
5 7
5 7
1200
10
10
3
3
4
10
10
10
10
10
10
10
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
4
3
2
1
1
0
0.5
0
0
E
SOURCE-DRAIN VOLTAGE V
V
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
rr
FORWARD CHARACTERISTICS
GS
20
20
GATE RESISTANCE R
GATE RESISTANCE R
= 0V
0.6
FREE-WHEEL DIODE
40
40
HIGH POWER SWITCHING USE
HALF-BRIDGE
HALF-BRIDGE
T
(TYPICAL)
0.7
(TYPICAL)
(TYPICAL)
ch
60
60
= 125°C
80
80
INSULATED PACKAGE
0.8
Conditions:
V
V
I
T
Inductive load
Conditions:
V
V
I
T
Inductive load
D
FM200TU-2A
D
ch
DD
GS
100
ch
100
DD
GS
= 100A
= 100A
T
= 125°C
= 125°C
ch
= 48V
= ±15V
G
G
= 48V
= ±15V
0.9
(Ω)
(Ω)
= 25°C
E
E
120
120
SD
sw(on)
sw(off)
t
t
Chip
d(off)
d(on)
(V)
t
t
140
140
1.0
f
r
Feb. 2009