HCPL-316 ETC, HCPL-316 Datasheet - Page 28

• Manufacturer Part Number: HCPL-316
• Description: 2.0 Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback
• Manufacturer: ETC

HCPL-316J
HCPL-316J
Power/Layout
Considerations
Operating Within the
Maximum Allowable Power
Ratings (Adjusting Value of
R
Figure 74. Use of R
I
Figure 75. Current Buffer for Increased Drive Current.
ON,PEAK
G
Part Number
):
MURS160T3
MUR1100E
V
DESAT
BYM26E
UF4007
BYV26E
LED2+
V
BYV99
V
OUT
V
V
CC2
V
V
.
V
EE
EE
DESAT
C
E
LED2+
V
V
OUT
CC2
V
V
V
V
EE
EE
16
15
14
13
12
11
10
9
E
C
16
15
14
13
12
11
10
9
10
10 nF
C
R
100 pF
C
15 V
10
to Further Limit
8
10 nF
100 pF
Manufacturer
General Semi.
15 V
Motorola
Motorola
Philips
Philips
Philips
-5 V
-5 V
MJD44H11 or
MJD45H11 or
4.5
2.5
D44VH10
D45VH10
When choosing the value of R
it is important to confirm that the
power dissipation of the
HCPL-316J is within the
maximum allowable power
rating.
Higher Output Current Using
an External Current Buffer:
To increase the IGBT gate drive
current, a non-inverting current
buffer (such as the npn/pnp
buffer shown in Figure 75) may
be used. Inverting types are not
compatible with the desaturation
fault protection circuitry and
should be avoided. To preserve
the slow IGBT turn-off feature
during a fault condition, a 10 nF
capacitor should be connected
from the buffer input to V
a 10
the output and the common npn/
pnp base. The MJD44H11 /
MJD45H11 pair is appropriate
for currents up to 8A maximum.
The D44VH10 / D45VH10 pair is
appropriate for currents up to 15
A maximum.
DESAT Diode and DESAT
Threshold
The DESAT diode’s function is to
conduct forward current,
t
rr
75
75
75
75
75
75
(ns)
resistor inserted between
Max. Reverse Voltage
Rating, V
1000
1000
1000
1000
600
600
RRM
EE
(Volts)
and
G
,
28
allowing sensing of the IGBT’s
saturated collector-to-emitter
voltage, V
is “on”) and to block high
voltages (when the IGBT is “off”).
During the short period of time
when the IGBT is switching, there
is commonly a very high dV
voltage ramp rate across the
IGBT’s collector-to-emitter. This
results in I
dV
will charge the blanking
capacitor, C
minimize this charging current
and avoid false DESAT triggering,
it is best to use fast response
diodes. Listed in the below table
are fast-recovery diodes that are
suitable for use as a DESAT diode
(D
application circuit shown in
Figure 62, the voltage on pin 14
(DESAT) is V
(where V
voltage of D
IGBT collector-to-emitter
voltage). The value of V
triggers DESAT to signal a
FAULT condition, is nominally 7V
– V
threshold voltage can be
decreased by using multiple
DESAT diodes in series. If n is
the number of DESAT diodes
then the nominal threshold value
becomes V
x V
diodes instead of one, diodes with
half of the total required
maximum reverse-voltage rating
may be chosen.
The steps for doing this are:
1. Calculate the minimum desired
2. Calculate total power
DESAT
CE
R
dissipation in the part
referring to Figure 77.
F
F
Case 403A (surface mount)
G
. If desired, this DESAT
. In the case of using two
DO-204AL (axial leaded)
/dt) charging current which
SOD87 (surface mount)
;
SOD64 (axial leaded)
SOD57 (axial leaded)
59-04 (axial leaded)
). In the recommended
F
Package Type
CESAT
CHARGE
is the forward ON
CE,FAULT(TH)
BLANK
DESAT
DESAT
, (when the IGBT
. In order to
and V
(= C
= V
D-DESAT
F
CE
= 7 V – n
CE
+ V
which
is the
CE
CE
/dt
,
x