CGY181 Siemens Semiconductor Group, CGY181 Datasheet - Page 3

• Manufacturer Part Number: CGY181
• Description: GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier)
• Manufacturer: Siemens Semiconductor Group

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Electrical characteristics
(T A = 25°C , f=1.75 GHz, Z S =Z L =50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to
ground, unless otherwise specified)
Characteristics
Supply current
Pin= 0 dBm
Negative supply current
(normal operation)
Shut-off current
VTR n.c .
Negative supply current
(shut off mode, VTR pin n.c.)
Small signal gain
P in = -5dBm
Power Gain
V D =3.6V, Pin = 16 dBm
Power Gain
V D =5V, Pin = 16 dBm
Output Power
V D =3.6V, Pin = 16 dBm
Output Power
V D =5V , Pin = 16 dBm
Overall Power Added Efficiency
V D =3.6V, P in = 16 dBm
Overall Power Added Efficiency
V D =5V, P in = 16 dBm
Harmonics (P in =16dBm)
V D =3.6V
Harmonics (P in =16dBm)
V D =5V
Input VSWR V D =3.6V
Third order intercept point
f 1 =1.7500GHz; f 2 =1.7502GHz; V
Third order intercept point
f 1 =1.7500GHz; f 2 =1.7502GHz; V
All RF-measurements were done in a pulsed mode with a duty cycle of 10% (t on =0.33ms)!
Siemens Aktiengesellschaft
(P out =31.85dBm)
(P out =31.85dBm)
D
D
= 3.6V
= 5V
2f 0
2f 0
3f 0
3f 0
GaAs MMIC
Symbol
I DD
IP 3
IP 3
P 0
P 0
I G
I D
I G
G
G
G
pg. 3/14
14.5
17.5
30.5
33.5
min
-
-
-
-
-
-
-
-
-
-44.8
-45.1
1.9:1
20.5
15.5
18.5
31.5
34.5
400
-70
-75
typ
1.2
10
37
35
41
44
2
max
CGY 181
3
-
-
-
-
-
-
-
-
-
-
-
-
HL EH PD 21
01.02.96
dBm
dBm
dBm
dBm
Unit
dBc
dBc
mA
µA
dB
dB
dB
%
%
A
A