MC9S12A256 Motorola, MC9S12A256 Datasheet - Page 107

• Manufacturer Part Number: MC9S12A256
• Description: MC9S12DT256 Device User Guide V03.03
• Manufacturer: Motorola

A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Conditions are shown in Table A-4 unless otherwise noted
Num C
3. Maximum Erase and Programming times are achieved under particular combinations of f
4. Burst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
1
2
3
4
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
NOTE:
C
C Flash number of Program/Erase cycles
C
C
Data Retention at an average junction temperature of
T
EEPROM number of Program/Erase cycles
(–40 C
EEPROM number of Program/Erase cycles
(0 C < T
Javg
= 70 C
All values shown in Table A-12 are target values and subject to further extensive
characterization.
J
T
J
140 C)
0 C)
Table A-12 NVM Reliability Characteristics
Rating
Symbol
t
NVMRET
n
n
n
EEPE
EEPE
FLPE
MC9S12DT256 Device User Guide V03.03
100,000
10,000
1000
Min
15
NVMOP
.
NVMOP
10,000
Typ
and bus frequency f
Max
Cycles
Cycles
Cycles
bus
Years
Unit
.
105