ISPLSI2064E-135LT100 Lattice Semiconductor, ISPLSI2064E-135LT100 Datasheet - Page 3

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ISPLSI2064E-135LT100

Manufacturer Part Number
ISPLSI2064E-135LT100
Description
In-System Programmable SuperFAST High Density PLD
Manufacturer
Lattice Semiconductor
Datasheet
Supply Voltage V
Input Voltage Applied .............................. -2.5 to V
Off-State Output Voltage Applied ........... -2.5 to V
Storage Temperature ..................................... -65 to 150 C
Case Temp. with Power Applied .................... -55 to 125 C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
V
V
V
V
Absolute Maximum Ratings
DC Recommended Operating Condition
Capacitance (TA=25 C, f=1.0 MHz)
C
C
C
Erase/Reprogram Specification
Erase/Reprogram Cycles
CC
CCIO
IL
IH
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
1
2
3
SYMBOL
SYMBOL
Dedicated Input Capacitance
I/O Capacitance
Clock Capacitance
cc ...................................................
PARAMETER
Supply Voltage: Logic Core, Input Buffers
Supply Voltage: Output Drivers
Input Low Voltage
Input High Voltage
J
) with Power Applied ............ 150 C
PARAMETER
1
PARAMETER
-0.5 to +7.0V
CC
CC
5V
3.3V
+1.0V
+1.0V
MINIMUM
3
10,000
Specifications ispLSI 2064E
T
A
= 0 C to +70 C
TYPICAL
10
8
8
MAXIMUM
UNITS
pf
pf
pf
MIN.
4.75
4.75
3.0
2.0
0
V = 5.0V, V = 2.0V
V = 5.0V, V = 2.0V
V = 5.0V, V = 2.0V
CC
CC
CC
TEST CONDITIONS
V
MAX.
5.25
5.25
3.6
0.8
cc
UNITS
Cycles
+1
IN
I/O
Table 2-0005/2096E
Y
Table 2-0006/2064e
Table 2-0008/2064e
UNITS
V
V
V
V
V

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