BS62LV8003 Brilliance Semiconductor, BS62LV8003 Datasheet - Page 3

• Manufacturer Part Number: BS62LV8003
• Description: Very Low Power/Voltage CMOS SRAM 1M X 8 bit
• Manufacturer: Brilliance Semiconductor

R0201-BS62LV8003
1. Typical characteristics are at TA = 25
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
DATA RETENTION CHARACTERISTICS
PARAMETER
1. Vcc = 1.5V, T
2. t
LOW V
DC ELECTRICAL CHARACTERISTICS
LOW V
SYMBOL
Vcc
CE1
Vcc
CE2
RC
NAME
I
I
I
CCSB1
t
V
CCDR
V
CCSB
V
CDR
= Read Cycle Time
V
I
V
I
t
I
CC
OL
DR
R
OH
IL
OL
IL
IH
CC
CC
BSI
DATA RETENTION WAVEFORM (1)
RC
DATA RETENTION WAVEFORM (2)
.
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
A
= + 25
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
Standby Current-CMOS
PARAMETER
PARAMETER
O
C
(2)
(2)
o
C.
V
V
IH
IL
t
t
Vcc
CDR
Vcc = Max, V
Vcc = Max, CE1 = V
OE = V , V = 0V to
Vcc = Max, I
Vcc = Min, I
CE1= V
F = Fmax
CE1 = V
CE1
V
Vcc
CDR
IN
CE1
V
CE1
V
See Retention Waveform
IN
IN
( TA = 0
( TA = 0 to + 70
Vcc-0.2V, CE2 0.2V
Vcc - 0.2V or V
IH
IL
( CE1 Controlled )
IH
Vcc - 0.2V or CE2
( CE2 Controlled )
, CE2= V
TEST CONDITIONS
Vcc - 0.2V or V
Vcc - 0.2V or V
(3)
, CE2= V
TEST CONDITIONS
Vcc - 0.2V or CE2
I/O
OH
OL
IN
o
= -1mA
= 2mA
= 0V to Vcc
C to + 70
Data Retention Mode
3
Data Retention Mode
CE1
CE2
IH,
IL,
I
V
I
IH
DQ
V
DQ
≥
Vcc
DR
DR
or CE2 = V
IN
= 0mA,
Vcc - 0.2V
= 0mA
≥
o
0.2V
IN
IN
C )
1.5V
o
C )
1.5V
0.2V
0.2V
0.2V
0.2V or
IL
0.2V
or
Vcc=3V
Vcc=3V
Vcc=3V
Vcc=3V
Vcc=3V
Vcc=3V
Vcc=3V
MIN.
T
Vcc
1.5
RC
Vcc
--
0
t
t
-0.5
(2)
2.0
2.4
R
R
MIN. TYP.
--
--
--
--
--
--
V
IH
V
IL
TYP.
0.4
BS62LV8003
--
--
--
0.5
(1)
--
--
--
--
--
--
--
--
(1)
MAX.
MAX.
--
2
--
--
Vcc+0.2
0.8
0.4
20
--
1
1
1
3
Revision 2.4
April 2002
UNITS
UNITS
uA
ns
ns
V
mA
mA
uA
uA
uA
V
V
V
V