BS62UV256DC Brilliance Semiconductor, BS62UV256DC Datasheet
BS62UV256DC
Manufacturer Part Number
BS62UV256DC
Description
Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
1.BS62UV256DC.pdf
(11 pages)
R0201-BS62UV256
• Ultra low operation voltage : 1.8V ~ 3.6V
• Ultra low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
PRODUCT FAMILY
Brilliance Semiconductor Inc
PIN CONFIGURATIONS
BS62UV256SC
BS62UV256TC
BS62UV256PC
BS62UV256JC
BS62UV256DC
BS62UV256SI
BS62UV256TI
BS62UV256PI
BS62UV256JI
BS62UV256DI
FEATURES
Vcc = 2.0V
Vcc = 3.0V
-15
PRODUCT
VCC
FAMILY
A11
A13
A14
A12
WE
OE
A9
A8
A7
A6
A5
A4
A3
BSI
150ns (Max.) at Vcc = 2.0V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GND
DQ0
DQ1
DQ2
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
C-grade : 10mA (Max.) operating current
C-grade : 20mA (Max.) operating current
I- grade : 15mA (Max.) operating current
0.005uA (Typ.) CMOS standby current
I-grade : 25mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62UV256SC
BS62UV256SI
BS62UV256PC
BS62UV256PI
BS62UV256TC
BS62UV256TI
-40
TEMPERATURE
+0
OPERATING
O
O
C to +70
C to +85
Ultra Low Power/Voltage CMOS SRAM
32K X 8 bit
28
27
26
25
24
23
22
21
20
19
18
17
16
15
O
O
VC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
C
C
C
28
27
26
25
24
23
22
21
20
19
18
17
16
15
. reserves the right to modify document contents without notice.
1.8V ~ 3.6V
1.8V ~ 3.6V
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
RANGE
Vcc
SPEED
(ns)
Vcc=
150
150
2.0V
The BS62UV256 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bit
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both h
speed and low power features with a typical CMOS standby current
0.005uA and maximum access time of 150ns in 2V operation.
Easy memory expansion is provided by an active LOW
enable (CE), and active LOW output enable (OE) and three-st
output drivers.
The BS62UV256 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV256
1
330mil Plastic SOP, 8mmx13.4mm TSOP (normal type), 300mi
SOJ and 600mil Plastic DIP.
BLOCK DIAGRAM
DESCRIPTION
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A12
A14
A13
A11
Vdd
Gnd
WE
OE
A5
A6
A7
A8
A9
CE
0.2uA
0.4uA
Vcc=
3.0V
STANDBY
(I
CCSB1
Address
Buffer
Input
POWER DISSIPATION
8
Control
8
, Max)
is available in the JEDEC standard 28
0.1uA
0.3uA
Vcc=
2.0V
18
Output
Buffer
Buffer
Data
Input
Data
Decoder
Row
20mA
25mA
Vcc=
3.0V
Operating
(I
CC
8
512
, Max)
8
10mA
15mA
Vcc=
2.0V
BS62UV256
A4
Address Input Buffer
Column Decoder
A3 A2 A1 A0 A10
Memory Array
Sense Amp
Write Driver
Column I/O
512 x 512
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
TYPE
512
PKG
64
12
Revision 2.2
April 2001
l Plastic
chip
ate
igh
pin
of
s
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