BS62UV256DC Brilliance Semiconductor, BS62UV256DC Datasheet - Page 5

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BS62UV256DC

Manufacturer Part Number
BS62UV256DC
Description
Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
R0201-BS62UV256
READ CYCLE1
READ CYCLE2
READ CYCLE3
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
3. Address valid prior to or coincident with CE transition low.
4. OE = V
5. Transition is measured
SWITCHING WAVEFORMS (READ CYCLE)
The parameter is guaranteed but not 100% tested.
ADDRESS
OE
CE
D
ADDRESS
D
CE
D
BSI
OUT
OUT
OUT
IL
.
(1,2,4)
(1,3,4)
(1,4)
±
500mV from steady state with C
t
CLZ
(5)
t
IL
.
OH
t
t
ACS
CLZ
t
(5)
AA
t
ACS
t
L
5
t
AA
= 5pF as shown in Figure 1B.
OLZ
t
t
t
OE
RC
RC
t
t
t
OHZ
CHZ
CHZ
BS62UV256
(1,5)
(5)
t
(5)
t
OH
OH
Revision 2.2
April 2001

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