HYS6472V4200GU Siemens, HYS6472V4200GU Datasheet - Page 7

• Manufacturer Part Number: HYS6472V4200GU
• Description: 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
• Manufacturer: Siemens

Operating Currents (T
(Recommended Operating Conditions unless otherwise noted)
Semiconductor Group
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
BURST OPERATING CURRENT
tck = min.,
Read command cycling
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
Parameter & Test Condition
A
= 0 to 70
o
C, Vdd = 3.3V
tck = min.
tck = Infinity
tck = min.
tck = Infinity
CKE>=VIH(min.)
CKE<=VIL(max.)
standard version
7
0.3V 1)
ICC2PS
ICC2NS
Symb.
ICC2P
ICC2N
ICC3N
ICC3P
ICC1
ICC4
ICC5
ICC6
HYS64(72)V4200/8220GU
-8/-8B
130
100
130
35
45
2
1
5
8
1
max.
SDRAM-Modules
-10
90
30
40
70
90
2
1
5
8
1
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1,2
1
1
1
1
1
1
1
1
1