K7N161801A-Q(F)C(I)13 Samsung semiconductor, K7N161801A-Q(F)C(I)13 Datasheet - Page 9

• Manufacturer Part Number: K7N161801A-Q(F)C(I)13
• Description: 512Kx36 & 1Mx18 Pipelined NtRAM
• Manufacturer: Samsung semiconductor

K7N803601B
K7N801801B
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
OPERATING CONDITIONS at 3.3V I/O
* The above parameters are also guaranteed at industrial temperature range.
OPERATING CONDITIONS at 2.5V I/O
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
*Note : Sampled not 100% tested.
ASYNCHRONOUS TRUTH TABLE
Voltage on V
Voltage on Any Other Pin Relative to V
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Supply Voltage
Ground
Supply Voltage
Ground
Input Capacitance
Output Capacitance
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Sleep Mode
PARAMETER
Deselected
PARAMETER
PARAMETER
Operation
Read
Write
DD
Supply Relative to V
(T
PARAMETER
A
=25°C, f=1MHz)
ZZ
H
L
L
L
L
SS
SYMBOL
SYMBOL
SS
SYMBOL
V
Commercial
V
C
V
V
V
V
OE
C
Industrial
DDQ
DDQ
X
H
OUT
L
X
X
DD
DD
SS
SS
IN
I/O STATUS
Din, High-Z
High-Z
High-Z
High-Z
DQ
(0°C ≤ T
(0°C ≤ T
256Kx36 & 512Kx18 Pipelined NtRAM
TEST CONDITION
3.135
2.375
3.135
3.135
MIN
MIN
V
0
V
0
OUT
A
A
- 9 -
IN
≤ 70°C)
≤ 70°C)
=0V
=0V
Notes
1. X means "Don
2. Sleep Mode means power Sleep Mode of which stand-by current does
3. Deselected means power Sleep Mode of which stand-by current
SYMBOL
not depend on cycle time.
depends on cycle time.
T
T
T
T
V
V
P
BIAS
STG
OPR
OPR
DD
IN
D
Typ.
Typ.
3.3
2.5
3.3
3.3
0
0
′
t Care".
MIN
-
-
-0.3 to V
-0.3 to 4.6
-65 to 150
-40 to 85
-10 to 85
RATING
0 to 70
1.6
3.465
3.465
3.465
MAX
MAX
DD
2.9
0
0
+0.3
MAX
5
7
UNIT
UNIT
UNIT
UNIT
V
V
V
°C
°C
°C
°C
V
V
V
Nov. 2003
W
pF
pF
V
V
Rev 3.0
TM