K7R161884B-FC25 Samsung semiconductor, K7R161884B-FC25 Datasheet - Page 9

• Manufacturer Part Number: K7R161884B-FC25
• Description: 512Kx36 & 1Mx18 QDR II b4 SRAM
• Manufacturer: Samsung semiconductor

K7R163684B
K7R161884B
ABSOLUTE MAXIMUM RATINGS*
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
DC ELECTRICAL CHARACTERISTICS
Notes: 1. Minimum cycle. I
Input Leakage Current
Output Leakage Current
Operating Current
(x36) : DDR
Operating Current
(x18) : DDR
Standby Current(NOP): DDR
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input Low Voltage
Input High Voltage
Voltage on V
Voltage on V
Voltage on Input Pin Relative to V
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
2. V
10. V
2. |I
3. |I
4. Minimum Impedance Mode when ZQ pin is connected to V
5. Operating current is calculated with 50% read cycles and 50% write cycles.
6. Standby Current is only after all pending read and write burst opeactions are completed.
7. Programmable Impedance Mode.
8. These are DC test criteria. DC design criteria is V
9. V
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
timing parameters.
DDQ
OH
OL
IL
IH
|=(V
(Min)DC=
|=(V
(Max)DC=
must not exceed V
DD
DDQ
DDQ
DDQ
Supply Relative to V
Supply Relative to V
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
-
0.3V, V
V
DDQ
OUT
PARAMETER
=0mA.
+0.3, V
IL
DD
(Min)AC=-1.5V(pulse width ≤ 3ns).
during normal operation.
SYMBOL
IH
V
V
SS
V
V
I
(Max)AC=
V
I
I
I
V
SB1
I
OH1
OH2
OL
CC
CC
OL1
OL2
IL
IH
IL
SS
SS
V
Output Disabled,
V
Cycle Time ≥ t
V
Cycle Time ≥ t
Device deselected,
I
All Inputs
I
I
OUT
OH
OL
V
DD
DD
DD
DDQ
=1.0mA
=-1.0mA
=Max ; V
=Max , I
=Max , I
=0mA, f=Max,
+0.85V(pulse width ≤ 3ns).
TEST CONDITIONS
REF
≤
0.2V or ≥ V
±50mV. The AC V
OUT
OUT
(V
IN
KHKH
KHKH
=V
DD
=0mA
=0mA
DDQ
SS
=1.8V ±0.1V, T
Min
Min
.
to V
512Kx36 & 1Mx18 QDR
- 9 -
DD
-0.2V
DDQ
SYMBOL
IH
/V
V
T
T
T
V
V
DDQ
OPR
BIAS
STG
IL
DD
IN
levels are defined separately for measuring
-30
-25
-20
-16
-30
-25
-20
-16
-30
-25
-20
-16
A
=0°C to +70°C)
V
V
DDQ
DDQ
V
V
DDQ
REF
MIN
V
-0.3
-2
-2
/2-0.12
/2-0.12
-
-
-
-
-
-
-
-
-
-
SS
+0.1
-0.2
-0.5 to V
-0.5 to V
-0.5 to 2.9
-65 to 150
-10 to 85
RATING
0 to 70
V
V
DDQ
DDQ
V
DD+
V
DDQ
REF
V
DD
MAX
550
500
450
400
450
400
350
300
260
240
220
200
0.2
+2
+2
0.3
/2+0.12
/2+0.12
DDQ
+0.3
-0.1
TM
II b4 SRAM
UNIT NOTE
mA
mA
mA
µA
µA
V
V
V
V
V
V
UNIT
°C
°C
°C
July. 2004
V
V
V
Rev 3.1
8,10
1,5
1,5
1,6
2,7
3,7
8,9
4
4