K7R641882M Samsung semiconductor, K7R641882M Datasheet - Page 12

• Manufacturer Part Number: K7R641882M
• Description: 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
• Manufacturer: Samsung semiconductor

THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250 and V
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250
Note: For power-up, V
K7R643682M
K7R641882M
K7R640982M
Overershoot Timing
Junction to Ambient
Junction to Case
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
Output Power Supply Voltage
Output Timing Reference Level
Core Power Supply Voltage
Input High/Low Level
Input Reference Level
Input Rise/Fall Time
V
V
thermal impedance. T
2. Periodically sampled and not 100% tested.
DDQ
DDQ
V
+0.25V
DDQ
V
+0.5V
IL
Parameter
PRMETER
PRMETER
IH
V
J
DDQ
=T
20% t
A
+0.3V and V
+ P
D
KHKH
x
JA
(MIN)
DD
Symbol
V
T
V
V
V
IH
R
DDQ
REF
1.7V and V
DD
/T
/V
F
IL
DDQ
SYMBOL
=1.5V.
C
C
C
OUT
CLK
2Mx36 & 4Mx18 & 8Mx9 QDR
IN
DDQ
SYMBOL
1.25/0.25
1.7~1.9
1.4~1.9
V
0.3/0.3
Value
0.75
DDQ
JA
JC
1.4V t
/2
- 12 -
TESTCONDITION
200ms
Undershoot Timing
V
V
OUT
Unit
IN
ns
V
V
V
V
V
=0V
-
V
V
=0V
SS
SS
-0.25V
-0.5V
V
V
AC TEST OUTPUT LOAD
IH
SS
SRAM
TYP
TBD
TBD
TYP
TBD
TBD
TBD
V
REF
ZQ
20% t
250
0.75V
MAX
TBD
TBD
TBD
KHKH
(MIN)
TM
Zo=50
Unit
C
C
Preliminary
/W
/W
II b2 SRAM
Unit
pF
pF
pF
V
NOTES
NOTES
DDQ
Oct. 2004
Rev 0.5
/2
50