K7R641882M Samsung semiconductor, K7R641882M Datasheet - Page 2

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K7R641882M

Manufacturer Part Number
K7R641882M
Description
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
Manufacturer
Samsung semiconductor
Datasheet

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FUNCTIONAL BLOCK DIAGRAM
FEATURES
D(Data in)
ADDRESS
R
W
BW
K
K
C
C
2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDR
K7R643682M
K7R641882M
K7R640982M
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O,
• Separate independent read and write data ports
• HSTL I/O
• Full data coherency, providing most current data .
• Synchronous pipeline read with self timed early write.
• Registered address, control and data input/output.
• DDR(Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks(K and K) for accurate DDR timing at clock
• Two input clocks for output data(C and C) to minimize
• Two echo clocks (CQ and CQ) to enhance output data
• Single address bus.
• Byte write function.
• Sepatate read/write control pin(R and W)
• Simple depth expansion with no data contention.
• Programmable output impenance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball aray FBGA) with body size of 15x17mm
Notes: 1. Numbers in ( ) are for x18 device, x9 device also the same with appropriate adjustments of depth and width.
with concurrent read and write operation
freguency scaling.
1.8V+0.1V/-0.1V for 1.8V I/O
rising edges only.
clock-skew and flight-time mismatches.
traceability.
X
QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Samsung technology.
20 (or 21, 22)
36 (or 18, 9)
4(or 2)
LOGIC
DATA
CTRL
REG
ADD
REG
GEN
CLK
(or 21,22)
20
36 (or 18 ,9)
SELECT OUTPUT CONTROL
2Mx36 & 4Mx18 & 8Mx9 QDR
WRITE DRIVER
MEMORY
(2Mx18)
ARRAY
1Mx36
TM
- 2 -
II b2 SRAM
36 (or 18, 9)
Organization
X36
X18
X9
(or 36,
18)
72
K7R643682M-FC25
K7R643682M-FC20
K7R643682M-FC16
K7R641882M-FC25
K7R641882M-FC20
K7R641882M-FC16
K7R640982M-FC25
K7R640982M-FC20
K7R640982M-FC16
Number
Part
(or 36,
18)
72
TM
Cycle
Time
4.0
5.0
6.0
4.0
5.0
6.0
4.0
5.0
6.0
Preliminary
II b2 SRAM
(Echo Clock out)
Access
Time
36 (or 18, 9)
0.45
0.45
0.50
0.45
0.45
0.50
0.45
0.45
0.50
Q(Data Out)
CQ, CQ
Oct. 2004
Rev 0.5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns

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