SI4982DY-T1-E3 Vishay Semiconductors, SI4982DY-T1-E3 Datasheet

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SI4982DY-T1-E3

Manufacturer Part Number
SI4982DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI4982DY-T1-E3

Case
SOP8
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4982DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4982DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 70748
S-03950—Rev. B, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
100
100
(V)
Ordering Information: Si4982DY
G
G
S
S
1
1
2
2
1
2
3
4
J
J
a
a
0.150 @ V
= 150_C)
= 150_C)
0.180 @ V
a
r
Si4982DY-T1 (with Tape and Reel)
DS(on)
Top View
Dual N-Channel 100-V (D-S) MOSFET
SO-8
Parameter
Parameter
a
a
GS
GS
(W)
= 10 V
= 6 V
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
2.6
2.4
(A)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
G
Symbol
Symbol
T
N-Channel MOSFET
R
J
V
V
I
P
P
, T
DM
I
I
I
thJA
GS
DS
D
D
S
D
D
stg
D
S
- 55 to 150
Vishay Siliconix
Limit
Limit
"20
100
62.5
2.6
2.1
1.7
2.0
1.3
20
Si4982DY
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
2-1

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