SI4403DY-T1-E3 Vishay Semiconductors, SI4403DY-T1-E3 Datasheet

SI4403DY-T1-E3

Manufacturer Part Number

SI4403DY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4403DY-T1-E3.pdf (5 pages)

Specifications of SI4403DY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4403DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 5
Download datasheet (63Kb)

Notes

Document Number: 71683

S-04393—Rev. A, 13-Aug-01

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Surface Mounted on 1” x 1” FR4 Board.

–20

(V)

0.023 @ V

0.032 @ V

0.017 @ V

= 150_C)

Parameter

DS(on)

= –2.5 V

= –1.8 V

= –4.5 V

P-Channel 1.8-V (G-S) MOSFET

Top View

(W)

SO-8

Steady State

t v 10 sec

New Product

–9

–7

–6

= 25_C

= 70_C

= 25_C

= 70_C

(A)

Symbol

, T

thJA

thJF

stg

D TrenchFETr Power MOSFETS

D Load Switch

P-Channel MOSFET

– Game Stations

– Notebooks

– Desktops

10 secs

Typical

–2.1

2.5

1.6

–9

–7

–55 to 150

–20

–30

Steady State

Maximum

Vishay Siliconix

–6.5

–5.0

–1.3

1.35

0.87

Si4403DY

www.vishay.com

Unit

_C/W

C/W

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