SI4394DY-T1-E3 Vishay Semiconductors, SI4394DY-T1-E3 Datasheet

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SI4394DY-T1-E3

Manufacturer Part Number

SI4394DY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheets

1.SI4394DY.pdf (5 pages)

2.SI4394DY-T1-E3.pdf (5 pages)

Specifications of SI4394DY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI4394DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 5
Download datasheet (68Kb)

Notes

a.

Document Number: 72713

S-40442—Rev. A, 15-Mar-04

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Avalanch Current

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

30

30

Ordering Information: Si4394DY—E3 (Lead Free)

(V)

J

ti

t A bi

N-Channel Reduced Q

G

S

S

S

0.00975 @ V

0.00825 @ V

J

J

a

a

Si4394DY-T1—E3 (Lead Free with Tape and Reel)

= 150_C)

= 150_C)

t

a

a

1

2

3

4

Parameter

Parameter

r

DS(on)

Top View

a

a

SO-8

GS

GS

(W)

= 4.5 V

= 10 V

a

8

7

6

5

D

D

D

D

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

L= 0.1 mH

T

T

T

T

t v 10 sec

A

A

A

A

I

New Product

= 25_C

= 70_C

= 25_C

= 70_C

D

15

14

(A)

dg

, Fast Switching WFETt

Symbol

Symbol

T

R

R

R

V

V

J

I

i

P

P

, T

DM

I

I

I

AS

thJA

thJF

DS

GS

D

D

S

D

D

stg

G

FEATURES

D Extremely Low Q

D TrenchFETr Power MOSFET

D 100% R

APPLICATIONS

D High-Side DC/DC Conversion

D Synchronous Rectification

N-Channel MOSFET

Switching Losses

− Notebook

− Server

10 secs

Typical

2.7

2.7

1.9

15

12

32

68

16

D

S

g

Tested

−55 to 150

"12

30

50

45

Steady State

gd

Maximum

Vishay Siliconix

WFETt Technology for

1.3

1.4

0.9

10

42

90

20

8

Si4394DY

www.vishay.com

Unit

Unit

_C/W

C/W

_C

W

W

V

V

A

1

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