SI4370DY-T1-E3 Vishay Semiconductors, SI4370DY-T1-E3 Datasheet
SI4370DY-T1-E3
Manufacturer Part Number
SI4370DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet
1.SI4370DY.pdf
(9 pages)
Specifications of SI4370DY-T1-E3
Case
SOP8
Date_code
09+
Notes
a.
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Channel 1
Channel-1
Channel 2
Channel-2
Surface Mounted on 1” x 1” FR4 Board.
i
Ordering Information: Si4370DY—E3 (Lead Free)
V
DS
J
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
30
(V)
V
ti
DS
G
G
S
S
30
30
1
1
2
2
t A bi
(V)
Parameter
1
2
3
4
Parameter
J
J
a
a
= 150_C)
= 150_C)
t
a
a
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
Top View
Diode Forward Voltage
SO-8
0.030 @ V
0.028 @ V
0.022 @ V
0.022 @ V
a
a
0.50 V @ 1.0 A
r
DS(on)
V
SD
T
T
T
T
8
7
6
5
A
A
A
A
GS
GS
a
GS
GS
(V)
= 25_C
= 70_C
= 25_C
= 70_C
(W)
Steady-State
Steady-State
= 4.5 V
= 4.5 V
= 10 V
= 10 V
t v 10 sec
D
D
D
D
1
1
2
2
A
Symbol
T
J
= 25_C UNLESS OTHERWISE NOTED)
V
V
I
P
P
, T
DM
I
I
I
GS
DS
D
D
S
D
D
Symbol
stg
R
R
R
thJA
thJF
I
I
D
F
Channel-1
7.5
6.5
7.5
6.5
2.0
(A)
(A)
G
"20
1
N-Channel MOSFET
Typ
10 secs
52
93
35
7.5
6.0
1.7
2.0
1.3
MOSFET
D
S
Channel-2
1
1
FEATURES
D LITTLE FOOTr Plus Schottky
D Si4830DY Pin Compatible
D PWM Optimized
D 100% R
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
"12
Max
62.5
110
−55 to 150
40
30
30
Channel-1
g
G
Tested
2
"20
N-Channel MOSFET
Steady State
Typ
53
93
35
5.7
4.6
0.9
1.1
0.7
Schottky
Vishay Siliconix
D
S
2
2
Channel-2
"12
Si4370DY
Max
62.5
110
Schottky Diode
40
www.vishay.com
Unit
_C
W
W
V
V
A
A
Unit
_C/W
C/W
1
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