RFD16N02LSM Intersil Corporation, RFD16N02LSM Datasheet

RFD16N02LSM

Manufacturer Part Number

RFD16N02LSM

Description

Manufacturer

Intersil Corporation

Datasheets

1.RFD16N02LSM.pdf (8 pages)

2.RFD16N02LSM.pdf (8 pages)

Specifications of RFD16N02LSM

Date_code

08+

Current page: 1 of 8
Download datasheet (80Kb)

May 1997

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 16A, 20V

• r

• Temperature Compensating PSPICE Model

• Can be Driven Directly from CMOS, NMOS,

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

Ordering Information

NOTE: When ordering, use the entire part number. Add the sufﬁx

9A, to obtain the TO-252AA variant in tape and reel, e.g.

RFD16N02LSM9A.

Formerly developmental type TA49243.

Packaging

RFD16N02L

RFD16N02LSM

and TTL Circuits

DS(ON)

PART NUMBER

C Operating Temperature

(FLANGE)

= 0.022

DRAIN

TO-251AA

TO-252AA

JEDEC TO-251AA

PACKAGE

16N02L

SOURCE

Intersil Corporation 1999

DRAIN

GATE

BRAND

Description

The RFD16N02L and RFD16N02LSM are N-Channel power

MOSFETs manufactured using the MegaFET process. This

process, which uses feature sizes approaching those of

LSI circuits, gives optimum utilization of silicon, resulting in

outstanding performance. They were designed for use in

applications such as switching regulators, switching convert-

ers, motor drivers and relay drivers. This performance is

accomplished through a special gate oxide design which

provides full rated conductance at gate bias in the 3V to 5V

range, thereby facilitating true on-off power control directly

from logic level (5V) integrated circuits.

Symbol

16A, 20V, 0.022 Ohm, N-Channel,

RFD16N02LSM

GATE

SOURCE

Logic Level, Power MOSFET

RFD16N02L,

JEDEC TO-252AA

DRAIN

(FLANGE)

File Number

4341

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