RFD16N02LSM Intersil Corporation, RFD16N02LSM Datasheet
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RFD16N02LSM
Manufacturer Part Number
RFD16N02LSM
Description
Manufacturer
Intersil Corporation
Specifications of RFD16N02LSM
Date_code
08+
May 1997
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 16A, 20V
• r
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N02LSM9A.
Formerly developmental type TA49243.
Packaging
RFD16N02L
RFD16N02LSM
and TTL Circuits
DS(ON)
PART NUMBER
o
C Operating Temperature
(FLANGE)
= 0.022
DRAIN
TO-251AA
TO-252AA
JEDEC TO-251AA
PACKAGE
|
Copyright
©
16N02L
16N02L
SOURCE
Intersil Corporation 1999
DRAIN
GATE
BRAND
1
Description
The RFD16N02L and RFD16N02LSM are N-Channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Symbol
16A, 20V, 0.022 Ohm, N-Channel,
RFD16N02LSM
GATE
SOURCE
Logic Level, Power MOSFET
RFD16N02L,
JEDEC TO-252AA
G
D
S
DRAIN
(FLANGE)
File Number
4341