BF579 Vishay Semiconductors, BF579 Datasheet

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BF579

Manufacturer Part Number

BF579

Description

Manufacturer

Vishay Semiconductors

Datasheets

1.BF579.pdf (5 pages)

2.BF579.pdf (5 pages)

3.BF579.pdf (5 pages)

4.BF579.pdf (5 pages)

Specifications of BF579

Date_code

05+

Packing_info

SOT-23

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

BF579-GS08

Manufacturer:

M/A-COM

Quantity:

2 390

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BF579R

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BF579R-GS08

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BF579RGS08

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 5
Download datasheet (214Kb)

Silicon PNP Planar RF Transistor

Features

Applications

UHF/VHF uncontrolled prestages with low noise and

low cross modulation.

Mechanical Data

Typ: BF579

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Absolute Maximum Ratings

T

Maximum Thermal Resistance

1)

Electrical DC Characteristics

T

Document Number 85001

Rev. 1.4, 15-Apr-05

• High transition frequency

• Low distortion

• Lead (Pb)-free component

• Component in accordance to

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

Junction ambient

Collector cut-off current

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown

voltage

DC forward current transfer ratio - V

amb

amb

on glass fibre printed board (25 x 20 x 1.5) mm

RoHS 2002/95/EC and WEEE 2002/96/EC

= 25 °C, unless otherwise specified

= 25 °C, unless otherwise specified

Parameter

Parameter

Parameter

T

1)

- V

- V

- V

- I

amb

C

CE

CB

EB

CE

= 1 mA, I

≤ 60 °C

= 20 V, V

= 15 V, I

= 3 V, I

= 10 V, - I

Test condition

Test condition

Test condition

C

B

E

3

= 0

= 0

BE

C

= 0

plated with 35 µm Cu

= 10 mA

= 0

e3

- V

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BF579R

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Symbol

- I

- I

- I

(BR)CEO

h

CBO

EBO

CES

FE

Symbol

Symbol

- V

- V

- V

R

P

T

- I

thJA

T

CBO

CEO

EBO

stg

tot

Electrostatic sensitive device.

Observe precautions for handling.

C

j

Min

20

20

BF579 / BF579R

- 55 to + 150

Vishay Semiconductors

Value

Value

BF579R

Typ.

BF579

200

150

450

50

20

20

25

3

3

2

Max

100

100

10

90

1

1

www.vishay.com

3

2

19212

K/W

Unit

mW

Unit

mA

°C

°C

V

V

V

Unit

µA

nA

µA

V

1

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