IL213A Siemens Semiconductor Group, IL213A Datasheet

IL213A

Manufacturer Part Number

IL213A

Description

SOP8

Manufacturer

Siemens Semiconductor Group

Datasheets

1.IL211A.pdf (3 pages)

2.IL213A.pdf (3 pages)

Specifications of IL213A

Date_code

02+

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FEATURES

• High Current Transfer Ratio

• Isolation Voltage, 2500 VAC

• Electrical Speciﬁcations Similar to

• Industry Standard SOIC-8 Surface

• Standard Lead Spacing, .05"

• Available in Tape and Reel Option

• Compatible with Dual Wave, Vapor Phase

• Underwriters Lab File #E52744

DESCRIPTION

The IL211A/212A/213A are optically coupled pairs

with a Gallium Arsenide infrared LED and a silicon

NPN phototransistor. Signal information, including a

DC level, can be transmitted by the device while

maintaining a high degree of electrical isolation

between input and output. The IL211A//212A/213A

comes in a standard SOIC-8 small outline package

for surface mounting which makes it ideally suited

for high density applications with limited space. In

addition to eliminating through-holes requirements,

this package conforms to standards for surface

mounted devices.

A choice of 20, 50, and 100% minimum CTR at

variety of different applications.

Maximum Ratings

Emitter

Peak Reverse Voltage .....................................6.0 V

Continuous Forward Current .........................60 mA

Power Dissipation at 25 C............................90 mW

Derate Linearly from 25 C......................1.2 mW/ C

Detector

Collector-Emitter Breakdown Voltage...............30 V

Emitter-Collector Breakdown Voltage.................7 V

Collector-Base Breakdown Voltage..................70 V

Power Dissipation ......................................150 mW

Derate Linearly from 25 C2.0 mW/ C

Package

Total Package Dissipation at 25 C Ambient

Derate Linearly from 25 C......................3.3 mW/ C

Storage Temperature ...................–55 C to +150 C

Operating Temperature ...............–55 C to +100 C

Soldering Time at 260 C ............................. 10 sec.

=10 mA makes these optocouplers suitable for a

IL211A—20% Minimum

IL212A—50% Minimum

IL213A—100% Minimum

(LED + Detector) ....................................280 mW

Standard 6 Pin Coupler

Mountable Package

(Conforms to EIA Standard RS481A)

and IR Reﬂow Soldering

(Code Letter P)

RMS

Characteristics ( T

Dimensions in inches (mm)

(6.10)

Emitter

Forward Voltage

Reverse Current

Capacitance

Detector

Breakdown Voltage

Dark Current,

Collector-Emitter

Capacitance,

Collector-Emitter

Package

DC Current Transfer

Ratio

Saturation Voltage,

Collector-Emitter

Isolation Test

Voltage

Capacitance,

Input toOutput

Resistance,

Input to Output

Switching Time

.240

IL211A

IL212A

IL213A

(3.05 .13)

.120 .005

.004 (.10)

.008 (.20)

Pin One ID

5–1

(4.88 .13)

.192 .005

SURFACE MOUNT OPTOCOUPLER

.021 (.53)

=25 C)

.050 (1.27)

Symbol

CTR

CEOdark

CEsat

VCEO

VECO

typ.

off

.016 (.41)

IL211A/212A/213A

C L

(3.91 .13)

.154 .005

Min.

100

2500

.020 .004

(.15 .10)

.008 (.20)

.015 .002

2 plcs.

(.38 .05)

Typ.

1.3

0.1

130

0.5

100

3.0

PHOTOTRANSISTOR

Cathode

Anode

Max.

1.5

100

0.4

SMALL OUTLINE

R.010

(.25) max.

5 max.

Unit

VAC

.058 .005

(1.49 .13)

RMS

Lead

Coplanarity

max.

.0015 (.04)

(3.18 .13)

.125 .005

Base

Collector

Emitter

Condition

=10 mA

=10 mA,

=10 A

=2.0 mA

=2 mA,

=6.0 V

=100 ,

=10 V

=5 V

=10 V

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