IS61LV6416-8TI Integrated Silicon Solution, IS61LV6416-8TI Datasheet

IS61LV6416-8TI

Manufacturer Part Number

IS61LV6416-8TI

Description

Manufacturer

Integrated Silicon Solution

Datasheet

1.IS61LV6416-8T.pdf (16 pages)

Specifications of IS61LV6416-8TI

Case

TSOP

Date_code

05+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IS61LV6416-8TI

Manufacturer:

ISSI

Quantity:

1 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IS61LV6416-8TI

Manufacturer:

ISSI

Quantity:

1 000

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Download datasheet (142Kb)

Integrated Silicon Solution, Inc.

Rev. I

11/22/05

FEATURES

• High-speed access time: 8, 10, 12 ns

• CMOS low power operation

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

64K x 16 HIGH-SPEED CMOS STATIC RAM

WITH 3.3V SUPPLY

IS61LV6416

IS61LV6416L

— 61LV6416:

— 61LV6416L:

required

75 mW (typical) operating current

65 mW (typical) operating current

0.5 mW (typical) standby current

50 µW (typical) standby current

Lower Byte

Upper Byte

I/O8-I/O15

I/O0-I/O7

A0-A15

GND

DECODER

CIRCUIT

CONTROL

CIRCUIT

DATA

I/O

DESCRIPTION

The

1,048,576-bit static RAM organized as 65,536 words by 16

bits. It is fabricated using

technology. This highly reliable process coupled with

innovative circuit design techniques, yields access times

as fast as 8 ns with low power consumption.

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs, CE and OE. The active

LOW Write Enable (WE) controls both writing and reading

of the memory. A data byte allows Upper Byte (UB) and

Lower Byte (LB) access.

The IS61LV6416/IS61LV6416L is packaged in the JEDEC

standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin

mini BGA (6mm x 8mm).

ISSI

MEMORY ARRAY

IS61LV6416/IS61LV6416L is a high-speed,

COLUMN I/O

64K x 16

ISSI

's high-performance CMOS

ISSI

NOVEMBER 2005

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