2SB1412 TLP Rohm, 2SB1412 TLP Datasheet

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2SB1412 TLP

Manufacturer Part Number

2SB1412 TLP

Description

Manufacturer

Rohm

Datasheet

1.2SB1412_TLP.pdf (5 pages)

Specifications of 2SB1412 TLP

Case

TO252-3

Date_code

2005+

Current page: 1 of 5
Download datasheet (108Kb)

Transistors

Low frequency transistor (−20V, −5A)

2SB1386 / 2SB1412 / 2SB1326

1) Low V

2) Excellent DC current gain characteristics.

3) Complements the 2SD2098 / 2SD2118 /

Epitaxial planar type

PNP silicon transistor

Features

Structure

V

(I

2SD2097.

C

CE(sat)

/I

B

= −4A / −0.1A)

CE(sat)

= −0.35V (Typ.)

.

∗

Denotes h

External dimensions (Unit : mm)

2SB1386

2SB1326

0.65Max.

ROHM : MPT3

EIAJ : SC-62

1.5±0.1

0.4±0.1

(1)

ROHM : ATV

Abbreviated symbol: BH

FE

2.54 2.54

(1)

6.8±0.2

(2)

2SB1386 / 2SB1412 / 2SB1326

1.6±0.1

(2)

0.5±0.1

3.0±0.2

4.5

(3)

+0.2

−

0.1

(3)

0.5±0.1

(1) Base

(2) Collector

(3) Emitter

0.4±0.1

1.5±0.1

1.05

(1) Emitter

(2) Collector

(3) Base

1.5

∗

+0.2

−

2.5±0.2

0.1

0.4

0.45±0.1

+0.1

−

0.05

2SB1412

ROHM : CPT3

EIAJ : SC-63

0.75

2.3

±

(1)

0.9

0.2

6.5

5.1

+

−0.1

(2)

±

0.2

0.2

2.3

(3)

±

Rev.A

0.2

0.65

C0.5

±

0.1

(1) Base

(2) Collector

(3) Emitter

0.5

1.0

2.3

0.55

+

±

±

−0.1

0.2

0.1

0.2

±

0.1

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