2SB1180A PANASONIC [Panasonic Semiconductor], 2SB1180A Datasheet
2SB1180A
Manufacturer Part Number
2SB1180A
Description
Silicon PNP epitaxial planar type darlington
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.2SB1180A.pdf
(4 pages)
Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• High forward current transfer ratio h
• I type package enabling direct soldering of the radiating fin to the
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SB1180
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
printed circuit board, etc. of small electronic equipment
2. * : Rank classification
Parameter
Rank
Parameter
h
FE1
2 000 to 5 000 4 000 to 10 000
2SB1180
2SB1180A
2SB1180A
T
a
2SB1180
2SB1180A
2SB1180
2SB1180A
= 25°C
Q
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
FE
T
V
V
I
P
h
I
T
V
CBO
CEO
EBO
C
CP
I
I
h
C
stg
CE(sat)
BE(sat)
C
FE1
CBO
EBO
t
t
j
f
CEO
FE2
stg
t
on
= 25°C
T
f
*
P
−55 to +150
Rating
I
V
V
V
V
V
I
I
V
I
V
C
C
C
C
−60
−80
−60
−80
−12
150
1.3
CB
CB
EB
CE
CE
CE
CC
−7
−8
15
= −30 mA, I
= −4 A, I
= −4 A, I
= −4 A, I
SJD00056AED
= −7 V, I
= −3 V, I
= −3 V, I
= −3 V, I
= −60 V, I
= −80 V, I
= −50 V
B
B
B1
Conditions
Unit
= −8 mA
= −8 mA
C
C
C
C
°C
°C
= −8 mA, I
W
V
V
V
A
A
B
E
E
= 0
= −4 A
= −8 A
= −1 A, f = 1 MHz
= 0
= 0
= 0
B2
= 8 mA
Note) Self-supported type package is also prepared.
Internal Connection
B
1
2 000
Min
−60
−80
500
7.0
4.6
2
±0.3
±0.4
3
2.3
1.1
0.75
Typ
3.0
2.0
0.5
2.0
1.0
20
±0.2
±0.1
±0.2
±0.2
±0.1
0.4
10 000
−100
−100
Max
−1.5
C
E
−2
−2
±0.1
3.5
I-G1 Package
±0.2
1: Base
2: Collector
3: Emitter
Unit: mm
0˚ to 0.15˚
0.9
0˚ to 0.15˚
MHz
Unit
mA
µA
±0.1
µs
µs
µs
V
V
V
1
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2SB1180A Summary of contents
Page 1
... Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio h • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ ...
Page 2
... (1)T =Ta C (2)Without heat sink (P =1.3W ( 120 160 ( °C ) Ambient temperature T a CE(sat) C −100 ( =250 =500 =1000 = −10 (3) (2) −1 (1) − 0.1 − 0.1 −1 − ...
Page 3
... −1 10 −4 −3 −2 − Time t (s) t (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) ( SJD00056AED 2SB1180, 2SB1180A 3 ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...