2SD2623X2 PANASONIC [Panasonic Semiconductor], 2SD2623X2 Datasheet
2SD2623X2
Manufacturer Part Number
2SD2623X2
Description
Silicon NPN epitaxial planar type For low-frequency amplification
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.2SD2623X2.pdf
(3 pages)
Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
Publication date: December 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• 2SD2623 × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse
(Emitter-coupled transistors)
FE
ratio
2. * 1: Pulse measurement
STANDARD JIS C 7030 measuring methods for transistors.
* 2: Ratio between one and another device
* 1, 2
Parameter
Parameter
* 3
* 1
* 1
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
h
T
V
V
I
P
I
T
V
FE(Small
CBO
CEO
EBO
V
V
/Large)
a
CP
I
C
stg
CE(sat)
BE(sat)
C
R
T
h
CBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
ob
on
−55 to +150
Rating
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
300
150
CB
0.5
CB
CE
CE
CB
25
20
12
= 10 µA, I
= 10 µA, I
= 1 mA, I
= 0.5 A, I
= 0.5 A, I
1
SJJ00264BED
= 2 V, I
= 2 V, I
= 10 V, I
= 25 V, I
= 10 V, I
B
B
B
C
C
C
E
Conditions
E
Unit
mW
E
E
= 0
= 20 mA
= 50 mA
= 0.5 A
= 0.5 A
°C
°C
V
V
V
A
A
= 0
= 0
= −50 mA, f = 200 MHz
= 0
= 0, f = 1 MHz
* 3: R
on
test circuit
Marking Symbol: 4Z
Internal Connection
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
10˚
3
2
I
B
(0.95) (0.95)
= 1 mA
0.30
2.90
1.9
4
R
on
+0.10
–0.05
+0.20
–0.05
±0.1
0.50
Min
200
=
Tr2
25
20
12
V
3
2
5
1
B
V
× 1 000
A
− V
0.99
0.14
Typ
200
1.0
B
10
4
V
(Ω)
B
4: Emitter
5: Base (Tr1)
1 kΩ
V
V
Tr1
Mini5-G1 Package
5
1
Max
0.40
100
800
1.2
V
A
0.16
+0.10
–0.06
Unit: mm
f = 1 kHz
V = 0.3 V
MHz
Unit
nA
pF
V
V
V
V
V
Ω
1
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2SD2623X2 Summary of contents
Page 1
Composite Transistors XN01558 Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • 2SD2623 ...
Page 2
XN01558 500 400 300 200 100 120 160 ( °C ) Ambient temperature T a BE(sat −25°C T ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...